JPH0255921B2 - - Google Patents
Info
- Publication number
- JPH0255921B2 JPH0255921B2 JP61139640A JP13964086A JPH0255921B2 JP H0255921 B2 JPH0255921 B2 JP H0255921B2 JP 61139640 A JP61139640 A JP 61139640A JP 13964086 A JP13964086 A JP 13964086A JP H0255921 B2 JPH0255921 B2 JP H0255921B2
- Authority
- JP
- Japan
- Prior art keywords
- barium titanate
- tisi
- semiconductor
- added
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 56
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 49
- 229910002113 barium titanate Inorganic materials 0.000 claims description 49
- 239000000203 mixture Substances 0.000 claims description 29
- 229910008484 TiSi Inorganic materials 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000010304 firing Methods 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 230000000052 comparative effect Effects 0.000 description 24
- 239000012071 phase Substances 0.000 description 24
- 229910010413 TiO 2 Inorganic materials 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 13
- 230000006866 deterioration Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000000047 product Substances 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000012752 auxiliary agent Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Thermistors And Varistors (AREA)
- Inorganic Insulating Materials (AREA)
- Resistance Heating (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61139640A JPS62296401A (ja) | 1986-06-16 | 1986-06-16 | チタン酸バリウム系半導体及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61139640A JPS62296401A (ja) | 1986-06-16 | 1986-06-16 | チタン酸バリウム系半導体及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62296401A JPS62296401A (ja) | 1987-12-23 |
| JPH0255921B2 true JPH0255921B2 (enExample) | 1990-11-28 |
Family
ID=15249984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61139640A Granted JPS62296401A (ja) | 1986-06-16 | 1986-06-16 | チタン酸バリウム系半導体及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62296401A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4080576B2 (ja) * | 1997-09-05 | 2008-04-23 | Ｔｄｋ株式会社 | 正特性半導体磁器の製造方法 |
| JP4058140B2 (ja) * | 1997-09-05 | 2008-03-05 | Ｔｄｋ株式会社 | チタン酸バリウム系半導体磁器 |
| US6071842A (en) * | 1997-09-05 | 2000-06-06 | Tdk Corporation | Barium titanate-based semiconductor ceramic |
-
1986
- 1986-06-16 JP JP61139640A patent/JPS62296401A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62296401A (ja) | 1987-12-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI389868B (zh) | Semiconductor porcelain composition and method of manufacturing the same | |
| JP5228915B2 (ja) | 半導体磁器組成物とその製造方法 | |
| JP5218042B2 (ja) | 半導体磁器組成物 | |
| JPWO2008053813A1 (ja) | 半導体磁器組成物とその製造方法 | |
| KR20100098662A (ko) | 반도체 자기 조성물 | |
| WO1998011568A1 (en) | Ptc thermistor material | |
| JPWO2010067866A1 (ja) | 半導体セラミック及び正特性サーミスタ | |
| JP5590494B2 (ja) | 半導体磁器組成物−電極接合体の製造方法 | |
| JP5765611B2 (ja) | Ｐｔｃ素子および発熱モジュール | |
| CN101528632B (zh) | 半导体陶瓷组合物及其制备方法 | |
| JPH0255921B2 (enExample) | ||
| JP2005145809A (ja) | 酸化亜鉛系焼結体と酸化亜鉛バリスタおよび積層型酸化亜鉛バリスタ． | |
| JP4217337B2 (ja) | 半導体磁器の製造方法 | |
| JPH07297009A (ja) | 正特性サーミスタ及びその製造方法 | |
| JP3598177B2 (ja) | 電圧非直線性抵抗体磁器 | |
| JPH10308302A (ja) | 酸化亜鉛系磁器組成物とその製造方法および酸化亜鉛バリスタ | |
| JP3178083B2 (ja) | チタン酸バリウム系セラミックス半導体およびその製造方法 | |
| TWI406304B (zh) | Semiconductor porcelain composition and method of manufacturing the same | |
| JP3699195B2 (ja) | 正特性半導体磁器およびその製造方法 | |
| JPH06163204A (ja) | 半導体化ビスマス層状構造酸化物およびｐｔｃサーミスタ素子 | |
| KR0147960B1 (ko) | 피티씨 써미스터용 세라믹 조성물 | |
| TWI430974B (zh) | Semiconductor porcelain composition and method of manufacturing the same | |
| JPH0769725A (ja) | セラミック製発熱素子 | |
| JPS6328323B2 (enExample) | ||
| JPH1112033A (ja) | チタン酸バリウム鉛系半導体磁器組成物 |