JPS62296401A - チタン酸バリウム系半導体及びその製造方法 - Google Patents
チタン酸バリウム系半導体及びその製造方法Info
- Publication number
- JPS62296401A JPS62296401A JP61139640A JP13964086A JPS62296401A JP S62296401 A JPS62296401 A JP S62296401A JP 61139640 A JP61139640 A JP 61139640A JP 13964086 A JP13964086 A JP 13964086A JP S62296401 A JPS62296401 A JP S62296401A
- Authority
- JP
- Japan
- Prior art keywords
- barium titanate
- semiconductor
- based semiconductor
- added
- agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 59
- 229910002113 barium titanate Inorganic materials 0.000 title claims description 53
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000203 mixture Substances 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 description 25
- 239000012071 phase Substances 0.000 description 25
- 239000003795 chemical substances by application Substances 0.000 description 13
- 230000006866 deterioration Effects 0.000 description 12
- 239000000047 product Substances 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000004453 electron probe microanalysis Methods 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000012752 auxiliary agent Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- -1 yum (Y) Chemical class 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 101150077457 ACOX1 gene Proteins 0.000 description 1
- 229910015806 BaTiO2 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Thermistors And Varistors (AREA)
- Inorganic Insulating Materials (AREA)
- Resistance Heating (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61139640A JPS62296401A (ja) | 1986-06-16 | 1986-06-16 | チタン酸バリウム系半導体及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61139640A JPS62296401A (ja) | 1986-06-16 | 1986-06-16 | チタン酸バリウム系半導体及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62296401A true JPS62296401A (ja) | 1987-12-23 |
| JPH0255921B2 JPH0255921B2 (enExample) | 1990-11-28 |
Family
ID=15249984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61139640A Granted JPS62296401A (ja) | 1986-06-16 | 1986-06-16 | チタン酸バリウム系半導体及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62296401A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999012863A1 (fr) * | 1997-09-05 | 1999-03-18 | Tdk Corporation | Ceramique semi-conductrice a base de titanate de baryum |
| US6071842A (en) * | 1997-09-05 | 2000-06-06 | Tdk Corporation | Barium titanate-based semiconductor ceramic |
| EP0961299A4 (en) * | 1997-09-05 | 2000-07-05 | Tdk Corp | PRODUCTION OF POSITIVE TEMPERATURE COEFFICIENT SEMICONDUCTOR CERAMIC |
-
1986
- 1986-06-16 JP JP61139640A patent/JPS62296401A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999012863A1 (fr) * | 1997-09-05 | 1999-03-18 | Tdk Corporation | Ceramique semi-conductrice a base de titanate de baryum |
| US6071842A (en) * | 1997-09-05 | 2000-06-06 | Tdk Corporation | Barium titanate-based semiconductor ceramic |
| EP0961299A4 (en) * | 1997-09-05 | 2000-07-05 | Tdk Corp | PRODUCTION OF POSITIVE TEMPERATURE COEFFICIENT SEMICONDUCTOR CERAMIC |
| US6221800B1 (en) * | 1997-09-05 | 2001-04-24 | Tdk Corporation | Method of producing PTC semiconducting ceramic |
| CN1093100C (zh) * | 1997-09-05 | 2002-10-23 | Tdk株式会社 | 钛酸钡系半导体陶瓷 |
| KR100358974B1 (ko) * | 1997-09-05 | 2002-10-31 | 티디케이가부시기가이샤 | 정특성 반도체 자기의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0255921B2 (enExample) | 1990-11-28 |
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