JPH0254655B2 - - Google Patents
Info
- Publication number
- JPH0254655B2 JPH0254655B2 JP59003081A JP308184A JPH0254655B2 JP H0254655 B2 JPH0254655 B2 JP H0254655B2 JP 59003081 A JP59003081 A JP 59003081A JP 308184 A JP308184 A JP 308184A JP H0254655 B2 JPH0254655 B2 JP H0254655B2
- Authority
- JP
- Japan
- Prior art keywords
- value
- electron beam
- correction
- values
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012937 correction Methods 0.000 claims description 62
- 238000010894 electron beam technology Methods 0.000 claims description 34
- 201000009310 astigmatism Diseases 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 238000012360 testing method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 238000011156 evaluation Methods 0.000 claims description 17
- 230000004075 alteration Effects 0.000 claims description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 206010010071 Coma Diseases 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/3045—Deflection calibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59003081A JPS60147117A (ja) | 1984-01-10 | 1984-01-10 | 電子ビ−ム装置の調整方法 |
US06/689,010 US4763004A (en) | 1984-01-10 | 1985-01-04 | Calibration method for electron beam exposer |
KR1019850000087A KR900001506B1 (ko) | 1984-01-10 | 1985-01-09 | 전자비임장치의 교정방법 |
DE8585300157T DE3571363D1 (en) | 1984-01-10 | 1985-01-10 | Calibration of electron beam apparatus |
EP85300157A EP0148784B1 (fr) | 1984-01-10 | 1985-01-10 | Etalonnage d'appareil à faisceau d'électrons |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59003081A JPS60147117A (ja) | 1984-01-10 | 1984-01-10 | 電子ビ−ム装置の調整方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60147117A JPS60147117A (ja) | 1985-08-03 |
JPH0254655B2 true JPH0254655B2 (fr) | 1990-11-22 |
Family
ID=11547385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59003081A Granted JPS60147117A (ja) | 1984-01-10 | 1984-01-10 | 電子ビ−ム装置の調整方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4763004A (fr) |
EP (1) | EP0148784B1 (fr) |
JP (1) | JPS60147117A (fr) |
KR (1) | KR900001506B1 (fr) |
DE (1) | DE3571363D1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6355935A (ja) * | 1986-08-27 | 1988-03-10 | Omron Tateisi Electronics Co | 電子ビ−ム描画装置 |
JPH0628232B2 (ja) * | 1987-09-16 | 1994-04-13 | 富士通株式会社 | 荷電ビーム露光装置 |
JP2540168B2 (ja) * | 1987-09-25 | 1996-10-02 | 三菱電機株式会社 | ビ―ム偏向位置補正装置 |
US4980922A (en) * | 1988-05-31 | 1990-12-25 | Grumman Aerospace Corporation | System for output plane calibration of an optical correlator |
JP2835097B2 (ja) * | 1989-09-21 | 1998-12-14 | 株式会社東芝 | 荷電ビームの非点収差補正方法 |
JPH07201701A (ja) * | 1993-12-28 | 1995-08-04 | Fujitsu Ltd | 電子ビーム露光装置および露光方法 |
US6559456B1 (en) * | 1998-10-23 | 2003-05-06 | Canon Kabushiki Kaisha | Charged particle beam exposure method and apparatus |
JP4434446B2 (ja) | 2000-07-21 | 2010-03-17 | Okiセミコンダクタ株式会社 | 走査型電子顕微鏡の校正方法 |
US6770867B2 (en) | 2001-06-29 | 2004-08-03 | Fei Company | Method and apparatus for scanned instrument calibration |
AU2002320188A1 (en) * | 2001-01-26 | 2003-01-21 | Fei Company | Method and apparatus for scanned instrument calibration |
JP4359232B2 (ja) * | 2004-12-20 | 2009-11-04 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
JP5055015B2 (ja) * | 2007-05-09 | 2012-10-24 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4180738A (en) * | 1977-07-30 | 1979-12-25 | National Research Development Corporation | Astigmatism in electron beam probe instruments |
GB2002547B (en) * | 1977-07-30 | 1982-01-20 | Tee W | Investigation of astigmatism in electron beam probe instruments |
JPS5492050A (en) * | 1977-12-29 | 1979-07-20 | Jeol Ltd | Method and apparatus for astigmatic correction of scanning electronic microscope and others |
US4162403A (en) * | 1978-07-26 | 1979-07-24 | Advanced Metals Research Corp. | Method and means for compensating for charge carrier beam astigmatism |
JPS567341A (en) * | 1979-06-29 | 1981-01-26 | Jeol Ltd | Automatic astigmatism compensation and focussing in scanning electron microscope |
JPS5618422A (en) * | 1979-07-23 | 1981-02-21 | Hitachi Ltd | Measuring method for diameter of electron beam |
NL7906632A (nl) * | 1979-09-05 | 1981-03-09 | Philips Nv | Automatische bundelcorrektie in stem. |
JPS5693318A (en) * | 1979-12-10 | 1981-07-28 | Fujitsu Ltd | Electron beam exposure device |
US4363104A (en) * | 1980-09-22 | 1982-12-07 | Hughes Aircraft Company | Imaging system having multiple image copying and hierarchical busing |
JPS57208140A (en) * | 1981-06-18 | 1982-12-21 | Fujitsu Ltd | Method of adjusting electron beam exposure apparatus |
JPS58218117A (ja) * | 1982-06-11 | 1983-12-19 | Fujitsu Ltd | 電子ビ−ム制御装置 |
JPS59124719A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | 電子ビ−ム露光装置 |
US4553260A (en) * | 1983-03-18 | 1985-11-12 | Honeywell Inc. | Means and method of processing optical image edge data |
-
1984
- 1984-01-10 JP JP59003081A patent/JPS60147117A/ja active Granted
-
1985
- 1985-01-04 US US06/689,010 patent/US4763004A/en not_active Expired - Lifetime
- 1985-01-09 KR KR1019850000087A patent/KR900001506B1/ko not_active IP Right Cessation
- 1985-01-10 EP EP85300157A patent/EP0148784B1/fr not_active Expired
- 1985-01-10 DE DE8585300157T patent/DE3571363D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3571363D1 (en) | 1989-08-10 |
EP0148784B1 (fr) | 1989-07-05 |
KR850005621A (ko) | 1985-08-28 |
EP0148784A3 (en) | 1987-04-08 |
KR900001506B1 (ko) | 1990-03-12 |
EP0148784A2 (fr) | 1985-07-17 |
JPS60147117A (ja) | 1985-08-03 |
US4763004A (en) | 1988-08-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |