JPH0253947B2 - - Google Patents

Info

Publication number
JPH0253947B2
JPH0253947B2 JP56208633A JP20863381A JPH0253947B2 JP H0253947 B2 JPH0253947 B2 JP H0253947B2 JP 56208633 A JP56208633 A JP 56208633A JP 20863381 A JP20863381 A JP 20863381A JP H0253947 B2 JPH0253947 B2 JP H0253947B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
transistor
opposite
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56208633A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58110071A (ja
Inventor
Shinichi Ito
Mutsumi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP56208633A priority Critical patent/JPS58110071A/ja
Publication of JPS58110071A publication Critical patent/JPS58110071A/ja
Publication of JPH0253947B2 publication Critical patent/JPH0253947B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56208633A 1981-12-23 1981-12-23 半導体装置 Granted JPS58110071A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56208633A JPS58110071A (ja) 1981-12-23 1981-12-23 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56208633A JPS58110071A (ja) 1981-12-23 1981-12-23 半導体装置

Publications (2)

Publication Number Publication Date
JPS58110071A JPS58110071A (ja) 1983-06-30
JPH0253947B2 true JPH0253947B2 (enrdf_load_stackoverflow) 1990-11-20

Family

ID=16559456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56208633A Granted JPS58110071A (ja) 1981-12-23 1981-12-23 半導体装置

Country Status (1)

Country Link
JP (1) JPS58110071A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0426535U (enrdf_load_stackoverflow) * 1990-06-27 1992-03-03

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669860A (en) * 1979-11-09 1981-06-11 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS58110071A (ja) 1983-06-30

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