JPH0243341B2 - - Google Patents

Info

Publication number
JPH0243341B2
JPH0243341B2 JP57140105A JP14010582A JPH0243341B2 JP H0243341 B2 JPH0243341 B2 JP H0243341B2 JP 57140105 A JP57140105 A JP 57140105A JP 14010582 A JP14010582 A JP 14010582A JP H0243341 B2 JPH0243341 B2 JP H0243341B2
Authority
JP
Japan
Prior art keywords
semiconductor
heterojunction
superlattice
doped
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57140105A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5929462A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14010582A priority Critical patent/JPS5929462A/ja
Publication of JPS5929462A publication Critical patent/JPS5929462A/ja
Publication of JPH0243341B2 publication Critical patent/JPH0243341B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP14010582A 1982-08-10 1982-08-10 ヘテロ接合素子 Granted JPS5929462A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14010582A JPS5929462A (ja) 1982-08-10 1982-08-10 ヘテロ接合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14010582A JPS5929462A (ja) 1982-08-10 1982-08-10 ヘテロ接合素子

Publications (2)

Publication Number Publication Date
JPS5929462A JPS5929462A (ja) 1984-02-16
JPH0243341B2 true JPH0243341B2 (ko) 1990-09-28

Family

ID=15261050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14010582A Granted JPS5929462A (ja) 1982-08-10 1982-08-10 ヘテロ接合素子

Country Status (1)

Country Link
JP (1) JPS5929462A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5963769A (ja) * 1982-10-05 1984-04-11 Agency Of Ind Science & Technol 高速半導体素子
JPS61289673A (ja) * 1985-06-18 1986-12-19 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS624366A (ja) * 1985-07-01 1987-01-10 Fujitsu Ltd ホツトエレクトロントランジスタ
JPH0815212B2 (ja) * 1985-08-30 1996-02-14 ソニー株式会社 半導体装置
CN115207089B (zh) * 2022-07-19 2023-06-09 江苏华兴激光科技有限公司 一种射频芯片外延片

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132074A (en) * 1979-04-02 1980-10-14 Max Planck Gesellschaft Hetero semiconductor and method of using same
JPS5676581A (en) * 1979-11-26 1981-06-24 Ibm Semiconductor device
JPS577165A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132074A (en) * 1979-04-02 1980-10-14 Max Planck Gesellschaft Hetero semiconductor and method of using same
JPS5676581A (en) * 1979-11-26 1981-06-24 Ibm Semiconductor device
JPS577165A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS5929462A (ja) 1984-02-16

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