JPH0243334B2 - - Google Patents

Info

Publication number
JPH0243334B2
JPH0243334B2 JP61103824A JP10382486A JPH0243334B2 JP H0243334 B2 JPH0243334 B2 JP H0243334B2 JP 61103824 A JP61103824 A JP 61103824A JP 10382486 A JP10382486 A JP 10382486A JP H0243334 B2 JPH0243334 B2 JP H0243334B2
Authority
JP
Japan
Prior art keywords
oxide film
substrate
gate oxide
oxygen
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP61103824A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62261128A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP61103824A priority Critical patent/JPS62261128A/ja
Publication of JPS62261128A publication Critical patent/JPS62261128A/ja
Publication of JPH0243334B2 publication Critical patent/JPH0243334B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP61103824A 1986-05-08 1986-05-08 Ｍｏｓ型半導体装置の製造方法 Granted JPS62261128A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61103824A JPS62261128A (ja) 1986-05-08 1986-05-08 Ｍｏｓ型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61103824A JPS62261128A (ja) 1986-05-08 1986-05-08 Ｍｏｓ型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62261128A JPS62261128A (ja) 1987-11-13
JPH0243334B2 true JPH0243334B2 (enExample) 1990-09-28

Family

ID=14364160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61103824A Granted JPS62261128A (ja) 1986-05-08 1986-05-08 Ｍｏｓ型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62261128A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69107101T2 (de) 1990-02-06 1995-05-24 Semiconductor Energy Lab Verfahren zum Herstellen eines Oxydfilms.
US7335570B1 (en) 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices
DE69125323T2 (de) * 1990-07-24 1997-09-25 Semiconductor Energy Lab Verfahren zum Herstellen isolierender Filme, Kapazitäten und Halbleiteranordnungen
TW237562B (enExample) * 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
JP2005285830A (ja) * 2004-03-26 2005-10-13 Dainippon Printing Co Ltd ゲート絶縁膜の形成方法及び薄膜トランジスタの製造方法並びに薄膜トランジスタ

Also Published As

Publication number Publication date
JPS62261128A (ja) 1987-11-13

Similar Documents

Publication Publication Date Title
JP2938361B2 (ja) 薄膜トランジスタのための多段階ｃｖｄ法
US5660694A (en) Film forming method
KR20020034960A (ko) 다상 납 게르마늄화물 막 및 퇴적 방법
JPH066789B2 (ja) 硼燐珪酸ガラスの蒸着法
JPH02141569A (ja) 超伝導材料
JPH0290568A (ja) 薄膜トランジスタの製造方法
JPS62261128A (ja) Ｍｏｓ型半導体装置の製造方法
JPH0284782A (ja) ジョセフソン素子の製造方法
KR100480367B1 (ko) 비정질막을결정화하는방법
JPS5856249B2 (ja) プラズマ反応による薄膜の製造方法
JPH0351094B2 (enExample)
US3668095A (en) Method of manufacturing a metallic oxide film on a substrate
KR940005290B1 (ko) 유전체 박막을 형성하는 방법 및 그 박막을 포함하는 반도체 장치
US4194927A (en) Selective thermal oxidation of As-containing compound semiconductor regions
JPS62262422A (ja) ＴｉＳｉ２膜の形成方法
JP2506961B2 (ja) 薄膜トランジスタの製造方法
JPH0722130B2 (ja) シリコン薄膜およびその作成方法
JPH04362017A (ja) 配向性Ｔａ２Ｏ５薄膜の作製方法
JPH01188677A (ja) 超電導薄膜の製造法
JPS6364903B2 (enExample)
JP2003243314A (ja) ダイヤモンド膜の製造方法およびそれを用いた電子デバイスの製造方法
JPH0257686A (ja) チタン酸鉛薄膜の製造方法
JPH01290771A (ja) 薄膜成長方法
JPS59148341A (ja) 絶縁膜形成方法
JPH0383804A (ja) 酸化物超電導薄膜の製造方法