JPH0243172B2 - - Google Patents
Info
- Publication number
- JPH0243172B2 JPH0243172B2 JP56095916A JP9591681A JPH0243172B2 JP H0243172 B2 JPH0243172 B2 JP H0243172B2 JP 56095916 A JP56095916 A JP 56095916A JP 9591681 A JP9591681 A JP 9591681A JP H0243172 B2 JPH0243172 B2 JP H0243172B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- resist film
- plasma
- pattern
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9591681A JPS57211143A (en) | 1981-06-23 | 1981-06-23 | Formation of micropattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9591681A JPS57211143A (en) | 1981-06-23 | 1981-06-23 | Formation of micropattern |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57211143A JPS57211143A (en) | 1982-12-24 |
JPH0243172B2 true JPH0243172B2 (en, 2012) | 1990-09-27 |
Family
ID=14150597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9591681A Granted JPS57211143A (en) | 1981-06-23 | 1981-06-23 | Formation of micropattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57211143A (en, 2012) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61248035A (ja) * | 1985-04-26 | 1986-11-05 | Nippon Zeon Co Ltd | 密着性の改良されたホトレジスト組成物 |
JPS62137830A (ja) * | 1985-12-12 | 1987-06-20 | Mitsubishi Electric Corp | 微細パタ−ン形成方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5952824B2 (ja) * | 1977-05-02 | 1984-12-21 | 株式会社日立製作所 | 感光性組成物処理方法 |
JPS5427369A (en) * | 1977-08-01 | 1979-03-01 | Hitachi Ltd | Pattern formation method |
JPS5449072A (en) * | 1977-09-26 | 1979-04-18 | Mitsubishi Electric Corp | Developing method for resist film |
JPS5460571A (en) * | 1977-10-24 | 1979-05-16 | Cho Lsi Gijutsu Kenkyu Kumiai | Dry developing and etching method |
JPS57157241A (en) * | 1981-03-25 | 1982-09-28 | Oki Electric Ind Co Ltd | Formation of resist material and its pattern |
US4396704A (en) * | 1981-04-22 | 1983-08-02 | Bell Telephone Laboratories, Incorporated | Solid state devices produced by organometallic plasma developed resists |
JPS57202537A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Resist composition for dry development |
JPS57202533A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Formation of pattern |
JPS57202535A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Formation of negative resist pattern |
JPS57202532A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Formation of pattern |
JPS57202534A (en) * | 1981-06-09 | 1982-12-11 | Fujitsu Ltd | Negative type resist composition |
-
1981
- 1981-06-23 JP JP9591681A patent/JPS57211143A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57211143A (en) | 1982-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4241165A (en) | Plasma development process for photoresist | |
JP4467857B2 (ja) | 電子線露光による193nm感光性フォトレジスト材料の改変 | |
US4649100A (en) | Production of resist images, and a suitable dry film resist | |
JPH07261393A (ja) | ネガ型レジスト組成物 | |
US4590149A (en) | Method for fine pattern formation on a photoresist | |
JPS64689B2 (en, 2012) | ||
US4321317A (en) | High resolution lithography system for microelectronic fabrication | |
JPH02115853A (ja) | 半導体装置の製造方法 | |
JPH0128368B2 (en, 2012) | ||
JPH033213B2 (en, 2012) | ||
EP0333591B1 (en) | Process for formation of resist patterns | |
JPH0243172B2 (en, 2012) | ||
US4588675A (en) | Method for fine pattern formation on a photoresist | |
JPH04226462A (ja) | レジスト材料およびそれを用いるレジストパターンの形成方法 | |
JPS6248211B2 (en, 2012) | ||
JPS6376438A (ja) | パタ−ン形成方法 | |
JPS58214149A (ja) | 微細パタ−ン形成方法 | |
JPS5891632A (ja) | 微細パタ−ン形成方法 | |
JPS5886726A (ja) | パタ−ン形成法 | |
JPH0757995A (ja) | レジストパターン形成方法 | |
JPS5860537A (ja) | 乾式パタ−ン形成方法 | |
JPS6048023B2 (ja) | ポジ型レジスト | |
EP0077057B2 (en) | Negative-type resist sensitive to ionizing radiation | |
JPH02156244A (ja) | パターン形成方法 | |
JP2692227B2 (ja) | レジストパターンの形成方法 |