JPH0242499U - - Google Patents

Info

Publication number
JPH0242499U
JPH0242499U JP12255688U JP12255688U JPH0242499U JP H0242499 U JPH0242499 U JP H0242499U JP 12255688 U JP12255688 U JP 12255688U JP 12255688 U JP12255688 U JP 12255688U JP H0242499 U JPH0242499 U JP H0242499U
Authority
JP
Japan
Prior art keywords
semiconductor element
electrode
substrate
insulating resin
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12255688U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12255688U priority Critical patent/JPH0242499U/ja
Publication of JPH0242499U publication Critical patent/JPH0242499U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本考案による半導体素子の実装構造
を示す断面図であり、第2図は従来の半導体素子
の実装構造を示す断面図である。 1……配線基板、2……配線パターン、3……
樹脂、4……金属突起、5……電極パツド、6…
…半導体素子、7……絶縁樹脂、8……導電性物
質、10……シールド板。
FIG. 1 is a sectional view showing a semiconductor device mounting structure according to the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor device mounting structure. 1... Wiring board, 2... Wiring pattern, 3...
Resin, 4... Metal protrusion, 5... Electrode pad, 6...
... Semiconductor element, 7 ... Insulating resin, 8 ... Conductive material, 10 ... Shield plate.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電極上に金属突起を有する半導体素子と、前記
電極と相対する配線パターンを有する基板と、前
記半導体素子と前記基板とがフエースダウンにて
実装されており、少くとも前記半導体素子の周囲
及び前記配線パターンの一部が絶縁樹脂にて覆わ
れている半導体素子の実装構造において、前記絶
縁樹脂の上に導電性を有する物質が直接存在する
ことを特徴とする半導体素子の実装構造。
A semiconductor element having a metal protrusion on an electrode, a substrate having a wiring pattern facing the electrode, the semiconductor element and the substrate being mounted face down, and at least the area around the semiconductor element and the wiring. 1. A semiconductor element mounting structure in which a part of a pattern is covered with an insulating resin, wherein a conductive substance exists directly on the insulating resin.
JP12255688U 1988-09-19 1988-09-19 Pending JPH0242499U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12255688U JPH0242499U (en) 1988-09-19 1988-09-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12255688U JPH0242499U (en) 1988-09-19 1988-09-19

Publications (1)

Publication Number Publication Date
JPH0242499U true JPH0242499U (en) 1990-03-23

Family

ID=31370598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12255688U Pending JPH0242499U (en) 1988-09-19 1988-09-19

Country Status (1)

Country Link
JP (1) JPH0242499U (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273571A (en) * 2002-03-18 2003-09-26 Fujitsu Ltd High-frequency module for shielding inter-element radio wave interference
JP2004006973A (en) * 2003-08-01 2004-01-08 Kitagawa Ind Co Ltd Structure and method for shielding electromagnetic wave
JP4743764B2 (en) * 2005-02-02 2011-08-10 セイコーインスツル株式会社 Manufacturing method of semiconductor package
JP2018040816A (en) * 2017-12-14 2018-03-15 株式会社東芝 Sensor
WO2023074507A1 (en) * 2021-10-25 2023-05-04 富士フイルム株式会社 Method for producing electronic device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273571A (en) * 2002-03-18 2003-09-26 Fujitsu Ltd High-frequency module for shielding inter-element radio wave interference
JP2004006973A (en) * 2003-08-01 2004-01-08 Kitagawa Ind Co Ltd Structure and method for shielding electromagnetic wave
JP4743764B2 (en) * 2005-02-02 2011-08-10 セイコーインスツル株式会社 Manufacturing method of semiconductor package
JP2018040816A (en) * 2017-12-14 2018-03-15 株式会社東芝 Sensor
WO2023074507A1 (en) * 2021-10-25 2023-05-04 富士フイルム株式会社 Method for producing electronic device

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