JP2018040816A - Sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sensor capable of providing a product excellent in magnetic shield characteristics with high productivity.SOLUTION: A sensor related to one embodiment includes a substrate, a lid portion, a detection portion, a first wire and a resin portion. The detection portion is provided between the substrate and the lid portion. The detection portion includes a movable portion and a magnetic element provided on the movable portion. The magnetic element includes a first magnetic layer, a second magnetic layer, and a non-magnetic layer provided between the first magnetic layer and the second magnetic layer. The first wire is provided between the substrate and the lid portion, and is electrically connected to the detection portion. The resin portion is provided between the substrate and the lid portion, includes a magnetic body, is brought into contact with at least a part of the first wire, and embeds a step of the first wire.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a sensor.

  As electronic devices such as information and communication devices become lighter and thinner, the density of component mounting on a wiring board is increasing. For this reason, in an electronic device, prevention of electromagnetic interference (EMI: Electro Magnetic Interferenc) between electronic components is an important issue. Some electronic devices are equipped with a strain detection device using a magnetoresistive effect element. In this strain sensing device, the presence of an external magnetic field tends to affect the characteristics of the magnetoresistive element. As a countermeasure against the electromagnetic field of the strain detection apparatus, a method such as a method of enclosing the surface of a part with a metal case or a shielding covering with a conductor such as conductive plating is used. In the strain sensing device, it is desirable to provide a product with excellent magnetic shield characteristics with high productivity.

US Pat. No. 6,781,231

  Embodiments of the present invention provide a sensor that can provide a product excellent in magnetic shield characteristics with high productivity.

  The sensor according to the embodiment includes a substrate, a lid part, a detection part, a first wiring, and a resin part. The detection unit is provided between the substrate and the lid. The detection unit includes a movable unit and a magnetic element provided in the movable unit. The magnetic element includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first wiring is provided between the substrate and the lid, and is electrically connected to the detection unit. The resin portion is provided between the substrate and the lid portion, includes a magnetic body, contacts at least a part of the first wiring, and fills a step of the first wiring.

FIG. 1A and FIG. 1B are schematic views illustrating the configuration of the strain detection apparatus according to the first embodiment. 2A to 2C are schematic views illustrating a magnetoresistive effect element. FIGS. 3A to 3D are schematic views illustrating changes in the direction of magnetization due to stress. FIG. 4 is a diagram illustrating the relationship between stress and the value of electrical resistance. FIGS. 5A and 5B are schematic cross-sectional views illustrating a method for manufacturing a strain sensing device. 6A and 6B are schematic cross-sectional views illustrating a method for manufacturing a strain sensing device. 7A and 7B are schematic cross-sectional views illustrating a method for manufacturing a strain sensing device. FIG. 8 is a schematic cross-sectional view illustrating a strain detection device according to the third embodiment. FIGS. 9A and 9B are schematic cross-sectional views illustrating a method for manufacturing a strain sensing device. FIGS. 10A and 10B are schematic cross-sectional views illustrating a method for manufacturing a strain sensing device. FIG. 11 is a schematic perspective view illustrating an electronic apparatus.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same members are denoted by the same reference numerals, and the description of the members once described is omitted as appropriate.

(First embodiment)
FIG. 1A and FIG. 1B are schematic views illustrating the configuration of the strain detection apparatus according to the first embodiment.
FIG. 1A shows a schematic cross-sectional view of the strain detection device 110. FIG. 1B shows a schematic plan view of the AA line shown in FIG.
2A to 2C are schematic views illustrating a magnetoresistive effect element.

  As illustrated in FIG. 1A, the strain detection device 110 includes a substrate 10, a lid portion 20, a frame portion 30, and a detection portion 40.

  The substrate 10 has a first surface 10a and a second surface 10b. The second surface 10b is a surface opposite to the first surface 10a. In the present embodiment, the direction orthogonal to the first surface 10a is the Z direction, one of the directions orthogonal to the Z direction is the X direction, and the direction orthogonal to the Z direction and the X direction is the Y direction. In the Z direction, the direction from the second surface 10b toward the first surface 10a is defined as up (upper side), and the opposite is defined as down (lower side).

  For example, an insulating material (glass epoxy or the like) is used for the substrate 10. The thickness of the substrate 10 is, for example, 300 micrometers (μm). A first wiring 11 is provided on the first surface 10 a of the substrate 10. A second wiring 12 is provided on the second surface 10 b of the substrate 10. Furthermore, via wiring 13 is provided on the substrate 10. The via wiring 13 is provided between the first surface 10a and the second surface 10b. The via wiring 13 connects the first wiring 11 and the second wiring 12. As shown in FIG. 1B, the outer shape of the substrate 10 viewed in the Z direction is, for example, a rectangle.

  The lid 20 is provided on the first surface 10 a of the substrate 10. For the lid 20, for example, a resin is used. A metal may be used for the lid 20. From the viewpoint of reducing the weight of the strain detection device 110, it is desirable to use a resin for the lid portion 20. The lid 20 may be provided with a through hole 20h.

  The frame part 30 is provided between the substrate 10 and the lid part 20. The frame portion 30 is provided on the first surface 10 a of the substrate 10 and is interposed between the substrate 10 and the lid portion 20. The frame part 30 is provided so that the outer side of the detection part 40 may be enclosed, for example. In the present embodiment, the inside of the frame part 30 refers to a region (space) surrounded by the substrate 10, the lid part 20, and the frame part 30.

  The frame part 30 includes a magnetic body 31 and has non-conductivity. The frame part 30 includes a resin part 32 and a magnetic body 31. For example, an epoxy resin is used for the resin portion 32. The magnetic body 31 is, for example, a magnetic powder. The magnetic body 31 is mixed in the resin part 32 which is a base material. The frame portion 30 is obtained by curing a magnetic paste, for example.

As an example of the magnetic body 31, an alloy (Ni-Cu-Zn-based alloy) containing nickel (Ni), copper (Cu), and zinc (Zn) can be given. The shape of the particles of the magnetic body 31 is, for example, spherical or indefinite. The specific resistance of the magnetic body 31 is, for example, 10 ⁶ ohm meter (Ω · m).

  When a magnetic paste is used as the frame 30, the viscosity of the magnetic paste is, for example, 100 (Pascal second) Pa · S or more and 400 Ps · S or less. The effective temperature of the magnetic paste is, for example, 150 degrees (° C.) or less. The glass transition point Tg of the magnetic paste is 150 ° C. or higher. The elastic modulus of the magnetic paste is, for example, 5 (gigapascal) GPa or more and 30 GPa or less. The linear expansion coefficient α1 of the magnetic paste is, for example, not less than 5 ppm / ° C. and not more than 30 ppm /.

  The frame part 30 may be provided on the first wiring 11 of the first surface 10a. Since the frame part 30 has non-conductivity, the frame part 30 may be provided in contact with the first wiring 11. As illustrated in FIG. 1B, the frame portion 30 may overlap the first wiring 11 as viewed in the Z direction. Thereby, compared with the case where the frame part 30 is provided in the outer side of the 1st wiring 11, the magnitude | size of the distortion detection apparatus 110 whole is reduced in size.

  The detection unit 40 is provided between the substrate 10 and the lid unit 20 and inside the frame unit 30. The detection unit 40 includes a magnetoresistive element 41. The detection unit 40 includes, for example, a semiconductor substrate 40s. For example, a silicon substrate or an SOI (Silicon On Insulator) substrate is used as the semiconductor substrate 40s. The magnetoresistive effect element 41 is formed on the semiconductor substrate 40s. The magnetoresistive effect element 41 may be mounted on the semiconductor substrate 40s.

  The detection unit 40 is electrically and mechanically connected to the first wiring 11 and the bump electrode 50. The thickness of the bump electrode 50 is, for example, 100 μm. A pad electrode (not shown) of the detection unit 40 is electrically connected to the second wiring 12 via the first wiring 11 and the via wiring 13. A reinforcing resin 51 may be provided around the bump electrode 50. A space S <b> 1 having a height substantially equal to the height of the bump electrode 50 is provided between the detection unit 40 and the first surface 10 a of the substrate 10.

  The detection unit 40 includes a fixed unit 45 and a movable unit 46. As shown in FIG. 1A, the fixing unit 45 is a thick part of the detection unit 40. The movable part 46 is a thin part of the detection part 40 (a part thinner than the thickness of the fixed part 45). The movable part 46 is a diaphragm, for example. In addition, the movable part 46 may be a movable beam other than the diaphragm.

  As shown in FIG. 1B, the movable unit 46 is provided in the central portion of the detection unit 40. The shape of the movable portion 46 viewed in the Z direction is, for example, a circle. The movable portion 46 is, for example, a portion obtained by etching a central portion of the semiconductor substrate 40s to form a thin film. The thickness of the movable part 46 is, for example, not less than 50 nanometers (nm) and not more than 1 μm, and more preferably not less than 100 nm and not more than 500 nm. A portion of the semiconductor substrate 40 s that is not thinned is a fixed portion 45. The bump electrode 50 is connected to the fixing unit 45 of the detection unit 40.

  A support unit 60 may be provided between the lid unit 20 and the detection unit 40. The support part 60 is provided between the fixing part 45 of the detection part 40 and the lid part 20. The distance between the lid 20 and the detection unit 40 is stabilized by the height of the support unit 60.

  A space S <b> 1 is provided between the movable portion 46 and the first surface 10 a of the substrate 10. A space S <b> 2 is provided between the movable portion 46 and the lid portion 20. The movable part 46 is movable up and down so as to bend between the space S1 and the space S2.

  The magnetoresistive effect element 41 is provided in the movable portion 46. As illustrated in FIGS. 2A to 2C, the magnetoresistive effect element 41 includes a fixed layer 411 and a free layer 412. An intermediate layer 413 is provided between the fixed layer 411 and the free layer 412.

  The fixed layer 411 is a layer whose magnetization direction is fixed. The direction of magnetization is fixed in a direction along the first surface 10a of the substrate 10 (for example, the X direction). The fixed layer 411 is a magnetic layer. The free layer 412 is a layer whose magnetization direction is not fixed. The free layer 412 is a magnetic layer. The intermediate layer 413 interposed between the fixed layer 411 and the free layer 412 is a nonmagnetic layer.

  In the magnetoresistive effect element 41, the MR effect due to the inverse magnetostriction effect appears based on the stress applied to the magnetoresistive effect element 41. The MR effect is a phenomenon in which the value of the electrical resistance of the laminated film changes due to a change in the magnetization of the magnetic material. In the magnetoresistive effect element 41, the amount of current flowing between the fixed layer 411 and the free layer 412 changes according to the change in the magnetization direction of the free layer 412.

  In the strain sensing device 110, the frame 30 exhibits the effect of a magnetic shield that shields an external magnetic field. In the strain detection device 110, the external magnetic field is shielded by the frame portion 30 without using a metal case. Therefore, the strain detection device 110 is reduced in weight compared to the case where a metal case is used.

Next, a change in the electric resistance value of the magnetoresistive effect element 41 will be described with reference to FIGS.
FIG. 2A shows a state in which no stress is applied to the magnetoresistive effect element 41. In this example, the magnetization direction D2 of the free layer 412 is 180 degrees different from the magnetization direction D1 of the fixed layer 411. In this case, the current flowing from the fixed layer 411 to the free layer 412 of the magnetoresistive effect element 41 is i0.

  FIG. 2B shows a state in which a tensile stress T <b> 1 is applied to the magnetoresistive effect element 41. When the stress T1 is applied to the magnetoresistive effect element 41, the magnetization direction D2 of the free layer 412 changes to D2a. The magnetization direction D2a differs from the magnetization direction D1 of the fixed layer 411 by 180 degrees −θ1. In this case, the current flowing from the fixed layer 411 to the free layer 412 of the magnetoresistive effect element 41 is i1. The amount of current i1 is greater than the amount of current i0. That is, the value of the electrical resistance of the magnetoresistive effect element 41 decreases.

  FIG. 2C shows a state in which a tensile stress T2 is applied to the magnetoresistive element 41. The stress T2 is larger than the stress T2. When the stress T2 is applied to the magnetoresistive effect element 41, the magnetization direction D2 of the free layer 412 changes to D2b. The magnetization direction D2b differs from the magnetization direction D1 of the fixed layer 411 by 180 degrees −θ2. θ2 is larger than θ1. In this case, the current flowing from the fixed layer 411 to the free layer 412 of the magnetoresistive effect element 41 is i2. The amount of current i2 is greater than the amount of current i0 and the amount of current i1. That is, the value of the electrical resistance of the magnetoresistive effect element 41 is further reduced.

  Thus, the value of the electrical resistance of the magnetoresistive effect element 41 changes depending on the applied stress. 2A to 2C illustrate a state in which tensile stresses T1 and T2 are applied from a state in which no stress is applied to the magnetoresistive effect element 41. FIG. When compressive stress is applied to the magnetoresistive effect element 41, the direction of change in the magnetization direction of the free layer 412 is opposite to that when tensile stress is applied.

  A bias magnetic field may be applied to the magnetoresistive effect element 41 as necessary. By applying a bias magnetic field, the magnetization direction D2 of the free layer 412 in a state where no stress is applied to the magnetoresistive effect element 41 is defined. For example, when it is desired to increase or decrease the electric resistance value of the magnetoresistive effect element 41 from the compressive stress to the tensile stress, the magnetization direction D2 of the free layer 412 by the bias magnetic field (the magnetization direction when no stress is applied) ) In the vicinity of the center of the fluctuation range of the electric resistance value of the magnetoresistive effect element 41.

FIGS. 3A to 3D are schematic views illustrating changes in the direction of magnetization due to stress.
3A and 3B show a state in which a tensile stress T10 is applied to the magnetoresistive effect element 41. FIG. FIG. 3A illustrates a schematic cross-sectional view of the detection unit 40 viewed in the Y direction. FIG. 3B shows a schematic plan view of the magnetoresistive element 41 viewed in the Z direction. In FIG. 3B, the position of the free layer 412 is shifted from the fixed layer 411 for easy understanding.

  3C and 3D show a state in which a compressive stress P10 is applied to the magnetoresistive effect element 41. FIG. FIG. 3C illustrates a schematic cross-sectional view of the detection unit 40 viewed in the Y direction. FIG. 3D shows a schematic plan view of the magnetoresistive element 41 viewed in the Z direction. In FIG. 3D, the position of the free layer 412 is shifted from the fixed layer 411 for easy understanding.

  As shown in FIGS. 3A and 3C, the magnetoresistive effect element 41 is provided in the movable portion 46 of the detection unit 40. The direction (stress or compression) of the stress applied to the magnetoresistive effect element 41 varies depending on the direction of warping of the movable portion 46.

  For example, as illustrated in FIG. 3A, when the central portion of the movable portion 46 is warped so as to protrude downward, a tensile stress T <b> 10 is applied to the magnetoresistive effect element 41. As shown in FIG. 3B, when a tensile stress T10 is applied to the magnetoresistive element 41, the magnetization direction of the free layer 412 becomes D21. In a state where no stress is applied to the magnetoresistive element 41, the magnetization direction of the free layer 412 is D20. The magnetization direction D20 is rotated, for example, 135 degrees along the XY plane with respect to the magnetization direction D1 of the fixed layer 411.

  When a tensile stress T10 is applied to the magnetoresistive element 41 in this state, the magnetization direction of the free layer 412 changes from D20 to D21. For example, the magnetization direction D21 is rotated by 90 degrees along the XY plane with respect to the magnetization direction D1 of the fixed layer 411. That is, the magnetization direction of the free layer 412 rotates so as to approach the magnetization direction D1 of the fixed layer 411 by applying the tensile stress T10.

  Thereby, the value of the electrical resistance of the magnetoresistive effect element 41 decreases before and after the application of the tensile stress T10. Therefore, the current flowing from the fixed layer 411 to the free layer 412 of the magnetoresistive element 41 increases from before to after application of the tensile stress T10.

  For example, as shown in FIG. 3C, when the central portion of the movable portion 46 is warped so as to protrude upward, a compressive stress P <b> 10 is applied to the magnetoresistive effect element 41. As shown in FIG. 3D, when the compressive stress P10 is applied to the magnetoresistive element 41, the magnetization direction of the free layer 412 changes from D20 to D22.

  The magnetization direction D22 is rotated by 180 degrees, for example, along the XY plane with respect to the magnetization direction D1 of the fixed layer 411. That is, the magnetization direction of the free layer 412 rotates away from the magnetization direction D1 of the fixed layer 411 by applying the compressive stress P10.

  Thereby, the value of the electrical resistance of the magnetoresistive effect element 41 increases before and after the application of the compressive stress P10. Therefore, the current flowing from the fixed layer 411 to the free layer 412 of the magnetoresistive effect element 41 decreases before and after the application of the compressive stress P10.

FIG. 4 is a diagram illustrating the relationship between stress and the value of electrical resistance.
The horizontal axis in FIG. 4 represents the stress applied to the magnetoresistive effect element 41. In the horizontal axis of FIG. 4, “0” represents a state in which no stress is applied, “−” represents tensile stress, and “+” represents compressive stress. The vertical axis of FIG. 4 represents the value of the electrical resistance of the magnetoresistive effect element 41.

  As shown in FIG. 4, when the tensile stress applied to the magnetoresistive effect element 41 increases, the value of the electrical resistance of the magnetoresistive effect element 41 decreases. On the other hand, when the compressive stress applied to the magnetoresistive effect element 41 increases, the value of the electrical resistance of the magnetoresistive effect element 41 increases. The value of the electrical resistance of the magnetoresistive effect element 41 in a state where no stress is applied is appropriately set according to the bias magnetic field applied to the free layer 412. In the present embodiment, the value of the electrical resistance of the magnetoresistive effect element 41 increases in one direction from the tensile stress applied to the magnetoresistive effect element 41 to the compressive stress.

  In the strain sensing device 110, the magnetoresistive effect element 41 having such characteristics is provided in the movable part 46 of the sensing part 40. Therefore, the value of the electrical resistance of the magnetoresistive effect element 41 changes due to the stress applied to the magnetoresistive effect element 41 due to the vibration of the movable portion 46. The value of the current flowing through the magnetoresistive element 41 is changed by the change in the value of the electrical resistance. Therefore, distortion is detected by a change in current flowing through the magnetoresistive effect element 41.

  The magnetoresistive effect element 41 is easily affected by an external magnetic field. In the strain detection device 110, the magnetic body 31 is included in the frame portion 30. Therefore, the influence of the external magnetic field on the magnetoresistive effect element 41 is suppressed by providing the detection unit 40 (the magnetoresistive effect element 41) inside the frame part 30.

  In the present embodiment, the magnetization direction of the free layer 412 of the magnetoresistive effect element 41 changes along the first surface 10a (XY plane). In this case, a magnetic shield may be provided so as to surround at least the side of the detection unit 40. In the strain detection device 110, the influence of the external magnetic field on the magnetoresistive effect element 41 is sufficiently suppressed by giving the frame portion 30 provided so as to surround the side of the detection unit 40 to have a magnetic shield effect.

  Moreover, the frame part 30 has non-conductivity. For this reason, the frame part 30 may be provided so as to be in contact with the first wiring 11. Here, when the frame portion having conductivity is used, it is necessary to provide a region for providing the frame portion at a position separated from the first wiring 11 outside the first wiring 11. As in the present embodiment, the frame 30 can be provided on the first wiring 11 because the frame 30 has non-conductivity. Therefore, the overall size of the strain detection device 110 is reduced.

  Further, in the strain detection device 110, since the magnetic shielding effect is obtained by the resinous frame portion 30, it is not necessary to cover the periphery of the detection portion 40 with a metal case. As a result, the strain detection device 110 is reduced in weight compared to the case where a metal case is used. Furthermore, the strain detection apparatus 110 excellent in drop impact resistance is provided by weight reduction.

(Second Embodiment)
Next, a manufacturing method of the strain detection device according to the second embodiment will be described.
FIG. 5A to FIG. 7B are schematic cross-sectional views illustrating a method for manufacturing a strain sensing device.
First, as shown in FIG. 5A, a lid material 200 is prepared. In the present embodiment, a plurality of lid portions 20 are formed from one lid material 200. The lid material 200 is provided with through holes 20 h and support portions 60 corresponding to the positions of the lid portions 20. For the lid material 200, for example, a resin is used. A metal may be used for the lid material 200. In this embodiment, the case where resin is used as the lid material 200 is taken as an example.

  Next, as shown in FIG. 5B, a substrate material 100 is prepared. In the present embodiment, a plurality of substrates 10 are formed from one substrate material 100. In the substrate material 100, the first wiring 11, the second wiring 12, and the via wiring 13 are formed corresponding to the position of each substrate 10. For the substrate material 100, for example, an insulating material (glass epoxy or the like) is used.

  Next, a paste-like resin 51 is applied corresponding to the position of each substrate 10 of the substrate material 100. The resin 51 is provided on the first wiring 11.

  Next, as illustrated in FIG. 6A, the detection unit 40 is mounted on the substrate material 100. The detection unit 40 is mounted corresponding to the position of each substrate 10 of the substrate material 100. The detection unit 40 is electrically and mechanically connected to the first wiring 11 via the bump electrode 50. The bump electrode 50 is embedded in the previously applied resin 51. The resin 51 is interposed between the detection unit 40 and the substrate material 100 and serves to reinforce the bonding of the bump electrode 50 to the first wiring 11.

  Next, as shown in FIG. 6B, the frame part 30 is provided around the detection part 40. The height of the frame portion 30 from the first surface 10a is higher than the height of the detection portion 40 from the first surface 10a. The frame part 30 may be provided on the first wiring 11. A magnetic paste is used for the frame part 30. The magnetic paste is obtained by mixing the magnetic body 31 in the resin portion 32 that is a base material. The magnetic paste is applied by printing, for example.

  Next, as illustrated in FIG. 7A, the lid material 200 is mounted on the frame portion 30. When the lid material 200 is mounted on the frame part 30, the frame part 30 is in an uncured state. When the lid material 200 is mounted on the uncured frame portion 30, the frame portion 30 is crushed by the lid material 200. The lid material 200 approaches the detection unit 40 while crushing the frame unit 30. And when the support part 60 provided under the lid | cover material 200 contact | abuts to the detection part 40, the position of the lid | cover material 200 will be decided.

  After mounting the lid material 200, the frame 30 and the resin 51 are cured. For example, the frame 30 and the resin 51 are cured by heating to a predetermined temperature.

  Next, as illustrated in FIG. 7B, the lid material 200, the frame portion 30, and the substrate material 100 are cut. The lid material 200, the frame part 30, and the substrate material 100 are cut in the Z direction at a substantially central position of the frame part 30. The divided lid material 200 becomes the lid portion 20. The divided substrate material 100 becomes the substrate 10. Thereby, a plurality of distortion detection devices 110 are completed. In the strain detection device 110 manufactured as described above, the side surface of the lid portion 20 is provided on the same plane as the side surface of the frame portion 30 and the side surface of the substrate 10.

  In such a manufacturing method, the plurality of strain detection devices 110 are collectively formed by cutting the substrate material 100, the lid material 200, and the frame portion 30. In this manufacturing method, the plurality of strain detection devices 110 are manufactured with higher productivity than when the metal case is individually covered on the detection unit.

(Third embodiment)
Next, a strain detection apparatus according to the third embodiment will be described.
FIG. 8 is a schematic cross-sectional view illustrating a strain detection device according to the third embodiment.
As shown in FIG. 8, in the strain detection device 120 according to the third embodiment, the frame portion 30 is provided integrally with the lid portion 20. In the example shown in FIG. 8, the support portion 60 is also provided integrally with the lid portion 20.

  In the strain detection device 120, the lid portion 20 and the frame portion 30 include the magnetic body 31 and have improperness. For example, the lid 20 and the frame 30 of the strain detection device 120 are formed of the same material as the frame 30 of the strain detection device 110. The lid part 20 and the frame part 30 include a resin part 32 and a magnetic body 31. The lid portion 20 and the frame portion 30 are made by curing a magnetic paste, for example. In the strain detection device 120, the support unit 60 may also be formed of the same material as the lid unit 20 and the frame unit 30.

  In the strain detection device 120, the magnetic shield effect is obtained by the frame portion 30, and the magnetic shield effect is also obtained by the lid portion 20. In other words, in the strain sensing device 120, the frame 30 performs magnetic shielding on the side of the magnetoresistive element 41. In the strain sensing device 120, the lid 20 performs a magnetic shield above the magnetoresistive effect element 41. The strain detection device 120 effectively shields an external magnetic field from the side and above toward the magnetoresistive element 41.

  In such a strain detection device 120, the lid portion 20 as well as the frame portion 30 is made of a resin having the magnetic body 31, so that the effect of shielding an external magnetic field from the side and from above is enhanced. Moreover, the weight reduction of the distortion | strain detector 120 is achieved compared with the case where a metal case is used. Furthermore, the strain detection apparatus 120 excellent in drop impact resistance is provided by weight reduction.

(Fourth embodiment)
Next, a method for manufacturing a strain sensing device according to the fourth embodiment will be described.
FIG. 9A to FIG. 10B are schematic cross-sectional views illustrating a method for manufacturing a strain sensing device.
First, as shown in FIG. 9A, a lid material 250 is prepared. In the present embodiment, a plurality of lid portions 20 are formed from one lid material 250. The lid material 250 is provided with a frame portion 30, a through hole 20 h and a support portion 60 corresponding to the position of each lid portion 20. That is, the frame part 30 and the support part 60 are integrally formed on the lid material 250. For the lid material 250, a resin containing the magnetic body 31 is used. The lid material 250 is obtained by curing a magnetic paste.

  Next, as shown in FIG. 9B, a substrate material 100 is prepared. In the present embodiment, a plurality of substrates 10 are formed from one substrate material 100. In the substrate material 100, the first wiring 11, the second wiring 12, and the via wiring 13 are formed corresponding to the position of each substrate 10. For the substrate material 100, for example, an insulating material (glass epoxy or the like) is used.

  Next, a paste-like resin 51 is applied corresponding to the position of each substrate 10 of the substrate material 100. The resin 51 is provided on the first wiring 11.

  Next, the detection unit 40 is mounted on the substrate material 100. The detection unit 40 is mounted corresponding to the position of each substrate 10 of the substrate material 100. The detection unit 40 is electrically and mechanically connected to the first wiring 11 via the bump electrode 50. The bump electrode 50 is embedded in the previously applied resin 51. The resin 51 is interposed between the detection unit 40 and the substrate material 100 and serves to reinforce the bonding of the bump electrode 50 to the first wiring 11.

  Next, as shown in FIG. 10A, the lid material 250 is mounted on the substrate material 100. When the lid material 200 is mounted on the substrate material 100, an uncured magnetic paste is applied between the frame portion 30 and the substrate material 100. When the support unit 60 provided under the lid material 250 comes into contact with the detection unit 40, the position of the lid material 250 is determined.

  After the lid material 250 is mounted, the magnetic paste and resin 51 applied between the frame portion 30 and the substrate material 100 are cured. For example, the magnetic paste and the resin 51 are cured by heating to a predetermined temperature.

  Next, as illustrated in FIG. 10B, the lid material 250, the frame portion 30, and the substrate material 100 are cut. The lid material 250, the frame part 30, and the substrate material 100 are cut in the Z direction at a substantially central position of the frame part 30. The divided lid material 250 becomes the lid portion 20. The divided substrate material 100 becomes the substrate 10. Thereby, a plurality of distortion detection devices 120 are completed. In the strain detection device 120 manufactured as described above, the side surface of the lid portion 20 is provided on the same plane as the side surface of the frame portion 30 and the side surface of the substrate 10.

  In such a manufacturing method, the plurality of strain detection devices 120 are collectively formed by cutting the substrate material 100, the lid material 250, and the frame portion 30. In this manufacturing method, the plurality of strain detection devices 120 are manufactured with high productivity as compared with the case where a metal case is individually covered on the detection unit.

  The strain detection devices 110 and 120 described above are used, for example, in a microphone detection portion. When the strain detection devices 110 and 120 are used as a detection portion of a microphone, the through hole 20h is a sound hole.

FIG. 11 is a schematic perspective view illustrating an electronic apparatus.
As shown in FIG. 11, the strain detection devices 110 and 120 are used in various electronic devices 500. The electronic device 500 includes a housing 510 and a printed wiring board 520 provided in the housing 510. The electronic device 500 may include a display unit 530. The display unit 530 may be provided with an input unit 535 such as a touch panel. The strain detection devices 110 and 120 are mounted on a printed wiring board 520, for example.

  Examples of the electronic device 500 include a mobile phone, a mobile terminal, a personal computer, an audio recorder, a video camera, a digital camera, and a television. If the strain detection devices 110 and 120 are applied to the electronic device 500, the electronic device 500 can be reduced in size and weight.

  As described above, according to the strain detection device and the manufacturing method thereof according to the embodiment, a product having excellent magnetic shield characteristics can be provided with high productivity.

  Although the present embodiment has been described above, the present invention is not limited to these examples. For example, those in which the person skilled in the art appropriately added, deleted, and changed the design of each of the above-described embodiments, and combinations of the features of each embodiment as appropriate, also have the gist of the present invention. As long as it is within the scope of the present invention.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 10 ... Board | substrate, 10a ... 1st surface, 10b ... 2nd surface, 11 ... 1st wiring, 12 ... 2nd wiring, 13 ... Via wiring, 20 ... Cover part, 20h ... Through-hole, 30 ... Frame part, 31 ... Magnetic body 32 ... Resin part 40 ... Detection part 40s ... Semiconductor substrate 41 ... Magnetoresistive element 45 ... Fixed part 46 ... Movable part 50 ... Bump electrode 51 ... Resin 60 ... Support part 100 ... substrate material, 110, 120 ... strain detection device, 200 ... lid material, 250 ... lid material, 411 ... fixed layer, 412 ... free layer, 413 ... intermediate layer

Claims (3)

A substrate,
A lid,
A detection unit provided between the substrate and the lid, wherein the detection unit includes a movable part and a magnetic element provided in the movable part, and the magnetic element is a first magnetic element. The detection unit, including a layer, a second magnetic layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer;
A first wiring provided between the substrate and the lid and electrically connected to the detection unit;
A resin portion that is provided between the substrate and the lid portion, includes a magnetic material, contacts at least a part of the first wiring, and fills a step of the first wiring;
With sensor.   The sensor according to claim 1, wherein the detection unit is provided between a plurality of portions of the resin unit.   The sensor according to claim 1 or 2, wherein the electric resistance of the magnetic element changes according to deformation of the movable part.

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