JPH0242295B2 - - Google Patents

Info

Publication number
JPH0242295B2
JPH0242295B2 JP61205236A JP20523686A JPH0242295B2 JP H0242295 B2 JPH0242295 B2 JP H0242295B2 JP 61205236 A JP61205236 A JP 61205236A JP 20523686 A JP20523686 A JP 20523686A JP H0242295 B2 JPH0242295 B2 JP H0242295B2
Authority
JP
Japan
Prior art keywords
mold
silicon
temperature
heating element
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61205236A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6272464A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS6272464A publication Critical patent/JPS6272464A/ja
Publication of JPH0242295B2 publication Critical patent/JPH0242295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP61205236A 1985-09-10 1986-09-02 金属溶融物の指向的な固化方法 Granted JPS6272464A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19853532131 DE3532131A1 (de) 1985-09-10 1985-09-10 Verfahren zur gerichteten erstarrung von metallschmelzen
DE3532131.8 1985-09-10

Publications (2)

Publication Number Publication Date
JPS6272464A JPS6272464A (ja) 1987-04-03
JPH0242295B2 true JPH0242295B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-09-21

Family

ID=6280480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61205236A Granted JPS6272464A (ja) 1985-09-10 1986-09-02 金属溶融物の指向的な固化方法

Country Status (4)

Country Link
EP (1) EP0218088B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6272464A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU581784B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE3532131A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3532142A1 (de) * 1985-09-10 1987-03-12 Bayer Ag Verfahren zum aufschmelzen und gerichteten erstarren von metallen
JP2553082B2 (ja) * 1987-05-26 1996-11-13 日立電線株式会社 銅の精製方法
US5116456A (en) * 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
DE4127792C1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1991-08-22 1992-08-06 W.C. Heraeus Gmbh, 6450 Hanau, De
DE19711550C2 (de) * 1997-03-20 2000-06-21 Bayer Ag Verfahren zur Herstellung von im wesentlichen Randzonen-freien Formteilen aus multikristallinem Silicium und die Verwendung dieser Formteile
DE10021585C1 (de) * 2000-05-04 2002-02-28 Ald Vacuum Techn Ag Verfahren und Vorrichtung zum Einschmelzen und Erstarren von Metallen und Halbmetallen in einer Kokille
DE10063383C1 (de) * 2000-12-19 2002-03-14 Heraeus Gmbh W C Verfahren zur Herstellung eines Rohrtargets und Verwendung
DE102006017621B4 (de) 2006-04-12 2008-12-24 Schott Ag Vorrichtung und Verfahren zur Herstellung von multikristallinem Silizium
DE102007038851A1 (de) 2007-08-16 2009-02-19 Schott Ag Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern
WO2013003458A1 (en) 2011-06-27 2013-01-03 Soleras Ltd. Sputtering target
DE102011087759B4 (de) 2011-12-05 2018-11-08 Solarworld Industries Gmbh Verfahren zur Herstellung von Silizium-Ingots und Silizium-Ingot

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3376915A (en) * 1964-10-21 1968-04-09 Trw Inc Method for casting high temperature alloys to achieve controlled grain structure and orientation
US3886994A (en) * 1971-11-05 1975-06-03 Onera (Off Nat Aerospatiale) Device for making a casting of a directionally solidified alloy
US4243471A (en) * 1978-05-02 1981-01-06 International Business Machines Corporation Method for directional solidification of silicon
DE3220241A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe
DE3532142A1 (de) * 1985-09-10 1987-03-12 Bayer Ag Verfahren zum aufschmelzen und gerichteten erstarren von metallen

Also Published As

Publication number Publication date
DE3677311D1 (de) 1991-03-07
DE3532131A1 (de) 1987-03-12
EP0218088A3 (en) 1988-02-10
JPS6272464A (ja) 1987-04-03
EP0218088B1 (de) 1991-01-30
EP0218088A2 (de) 1987-04-15
AU581784B2 (en) 1989-03-02
AU6254886A (en) 1987-03-12

Similar Documents

Publication Publication Date Title
US4382838A (en) Novel silicon crystals and process for their preparation
JP3523986B2 (ja) 多結晶半導体の製造方法および製造装置
JP2007284343A (ja) 単結晶または多結晶材料、特に多結晶シリコンの製造装置及び製造方法本特許出願は、２００６年４月１２日付けで出願されたドイツ特許出願Ｎｏ．１０２００６０１７６２１．９−４３、発明の名称「単結晶または多結晶材料、特に多結晶シリコンの製造方法」を基礎として優先権主張されている出願である。この優先権主張の基礎となる出願はその開示内容の参照書類として本願書類中に含まれている。
JPH1111924A (ja) 多結晶半導体インゴットの製造方法および装置
JPH0242295B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN100429333C (zh) 用于制备结晶物质块的设备用的熔炉及其制备方法
JPH092897A (ja) 多結晶半導体の製造方法および製造装置
JPH107493A (ja) シリコン半導体基板および太陽電池用基板の製造方法
JP5425421B2 (ja) モールディングおよび方向性結晶化によって半導体物質のウェハを製造する方法
Ciszek et al. Directionally solidified solar-grade silicon using carbon crucibles
US5069742A (en) Method and apparatus for crystal ribbon growth
KR101281033B1 (ko) 온도 조절이 용이한 연속주조법을 이용한 태양전지용 실리콘 기판 제조 장치 및 이를 이용한 실리콘 기판 제조 방법
CA2626063A1 (en) Device for making a silicon ribbon or of other crystalline materials and manufacturing method
US5055157A (en) Method of crystal ribbon growth
US5229083A (en) Method and apparatus for crystal ribbon growth
JPS63166711A (ja) 多結晶シリコン鋳塊の製造法
JP3368113B2 (ja) 多結晶半導体の製造方法
US5013393A (en) Process for the melting and directional solidification of metals
JP2007019209A (ja) 太陽電池用多結晶シリコンおよびその製造方法
JP3005633B2 (ja) 太陽電池用多結晶シリコン鋳塊の製造方法
JP6401051B2 (ja) 多結晶シリコンインゴットの製造方法
JPH0741393A (ja) 連続鋳造法によるシリコン板の製造方法
JPS58217419A (ja) 多結晶シリコン棒の製造方法および装置
JP2006335582A (ja) 結晶シリコン製造装置とその製造方法
EP1114884A1 (en) Process for producing compound semiconductor single crystal

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees