JPH0237093B2 - - Google Patents

Info

Publication number
JPH0237093B2
JPH0237093B2 JP56009085A JP908581A JPH0237093B2 JP H0237093 B2 JPH0237093 B2 JP H0237093B2 JP 56009085 A JP56009085 A JP 56009085A JP 908581 A JP908581 A JP 908581A JP H0237093 B2 JPH0237093 B2 JP H0237093B2
Authority
JP
Japan
Prior art keywords
silicon substrate
film
gate electrode
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56009085A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57124476A (en
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56009085A priority Critical patent/JPS57124476A/ja
Publication of JPS57124476A publication Critical patent/JPS57124476A/ja
Priority to US06/645,536 priority patent/US4622735A/en
Priority to US06/832,647 priority patent/US4830971A/en
Publication of JPH0237093B2 publication Critical patent/JPH0237093B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56009085A 1980-12-12 1981-01-26 Manufacture of semiconductor device Granted JPS57124476A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56009085A JPS57124476A (en) 1981-01-26 1981-01-26 Manufacture of semiconductor device
US06/645,536 US4622735A (en) 1980-12-12 1984-08-29 Method for manufacturing a semiconductor device utilizing self-aligned silicide regions
US06/832,647 US4830971A (en) 1980-12-12 1986-02-25 Method for manufacturing a semiconductor device utilizing self-aligned contact regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56009085A JPS57124476A (en) 1981-01-26 1981-01-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57124476A JPS57124476A (en) 1982-08-03
JPH0237093B2 true JPH0237093B2 (enrdf_load_stackoverflow) 1990-08-22

Family

ID=11710773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56009085A Granted JPS57124476A (en) 1980-12-12 1981-01-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57124476A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161372A (ja) * 1982-02-10 1983-09-24 Nec Corp Ｍｏｓ集積回路の製造方法
JPS5999774A (ja) * 1982-11-29 1984-06-08 Fujitsu Ltd 半導体装置の製造方法
JPH0644572B2 (ja) * 1983-03-23 1994-06-08 株式会社東芝 半導体装置の製造方法
US4503601A (en) * 1983-04-18 1985-03-12 Ncr Corporation Oxide trench structure for polysilicon gates and interconnects
JPS6037770A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置
JPS61129873A (ja) * 1984-11-28 1986-06-17 Seiko Epson Corp 半導体製造装置
CA1235824A (en) * 1985-06-28 1988-04-26 Vu Q. Ho Vlsi mosfet circuits using refractory metal and/or refractory metal silicide
JPS62162362A (ja) * 1986-01-10 1987-07-18 Mitsubishi Electric Corp Ｍｏｓ型集積回路及びその製造方法
JPS641283A (en) * 1987-06-23 1989-01-05 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH01298768A (ja) * 1988-05-27 1989-12-01 Sony Corp Ｍｉｓトランジスタの製造方法

Also Published As

Publication number Publication date
JPS57124476A (en) 1982-08-03

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