JPH0237092B2 - - Google Patents

Info

Publication number
JPH0237092B2
JPH0237092B2 JP60209741A JP20974185A JPH0237092B2 JP H0237092 B2 JPH0237092 B2 JP H0237092B2 JP 60209741 A JP60209741 A JP 60209741A JP 20974185 A JP20974185 A JP 20974185A JP H0237092 B2 JPH0237092 B2 JP H0237092B2
Authority
JP
Japan
Prior art keywords
thin film
film
forming
charged particles
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60209741A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6269534A (ja
Inventor
Kazuyoshi Kamoshita
Hiroaki Nakamura
Takao Amasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60209741A priority Critical patent/JPS6269534A/ja
Priority to CA000508851A priority patent/CA1247464A/en
Priority to DE3650612T priority patent/DE3650612T2/de
Priority to EP86106432A priority patent/EP0202572B1/en
Priority to EP93102886A priority patent/EP0544648B1/en
Priority to DE3689388T priority patent/DE3689388T2/de
Priority to KR1019860003683A priority patent/KR900005785B1/ko
Publication of JPS6269534A publication Critical patent/JPS6269534A/ja
Priority to US07/075,208 priority patent/US4816126A/en
Publication of JPH0237092B2 publication Critical patent/JPH0237092B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP60209741A 1985-05-13 1985-09-20 平坦性薄膜の形成方法 Granted JPS6269534A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP60209741A JPS6269534A (ja) 1985-09-20 1985-09-20 平坦性薄膜の形成方法
CA000508851A CA1247464A (en) 1985-05-13 1986-05-12 Method for forming a planarized thin film
DE3650612T DE3650612T2 (de) 1985-05-13 1986-05-12 Verfahren zur Planarisierung einer dünnen Al-Schicht
EP86106432A EP0202572B1 (en) 1985-05-13 1986-05-12 Method for forming a planarized aluminium thin film
EP93102886A EP0544648B1 (en) 1985-05-13 1986-05-12 Method for forming a planarized Al thin film
DE3689388T DE3689388T2 (de) 1985-05-13 1986-05-12 Verfahren zur Herstellung einer planierten Dünnschicht aus Aluminium.
KR1019860003683A KR900005785B1 (ko) 1985-05-13 1986-05-12 평탄성 박막의 제조방법
US07/075,208 US4816126A (en) 1985-05-13 1987-07-20 Method for forming a planarized thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60209741A JPS6269534A (ja) 1985-09-20 1985-09-20 平坦性薄膜の形成方法

Publications (2)

Publication Number Publication Date
JPS6269534A JPS6269534A (ja) 1987-03-30
JPH0237092B2 true JPH0237092B2 (enrdf_load_stackoverflow) 1990-08-22

Family

ID=16577868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60209741A Granted JPS6269534A (ja) 1985-05-13 1985-09-20 平坦性薄膜の形成方法

Country Status (1)

Country Link
JP (1) JPS6269534A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3382031B2 (ja) * 1993-11-16 2003-03-04 株式会社東芝 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810838A (ja) * 1981-07-14 1983-01-21 Fujitsu Ltd 半導体装置の製造方法
JPS58115835A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 半導体装置の埋込配線形成方法

Also Published As

Publication number Publication date
JPS6269534A (ja) 1987-03-30

Similar Documents

Publication Publication Date Title
EP0544648B1 (en) Method for forming a planarized Al thin film
JP4179642B2 (ja) 金属層の形成方法及び形成装置
JPS63152146A (ja) 層形成物質の付着および平坦化方法ならびにその装置
JPH0697660B2 (ja) 薄膜形成方法
JPH0151542B2 (enrdf_load_stackoverflow)
JPH11154673A (ja) 半導体装置の製造方法
KR100243785B1 (ko) 스텝된 반도체 웨이퍼 위에 알루미늄층을 형성시키기위한 다단계 스퍼터링 방법
JPH0774159A (ja) プラズマ処理方法およびプラズマ処理装置
JPH0237092B2 (enrdf_load_stackoverflow)
JP2641725B2 (ja) 基板バイアス方式のスパッタリング方法及びその装置
US20200090909A1 (en) Filling a cavity in a substrate using sputtering and deposition
CN114927413B (zh) 粘附金属层的溅射方法及半导体器件的制造方法
JPH06158299A (ja) 薄膜形成法及び装置並びに集積回路装置
JPS6091645A (ja) プラズマ気相成長によつて薄膜を堆積する方法
JPH0684539B2 (ja) スパッタリングによる薄膜形成方法
JPH01116068A (ja) バイアススパッタ装置
JPH01119665A (ja) イオンシャワー機構を有するバイアススパッタリング装置
JPH01309958A (ja) スパッタリング法による機能性堆積膜形成方法および装置
JPH08199355A (ja) スパッタリング装置及び方法
JPH027393B2 (enrdf_load_stackoverflow)
JPH01195272A (ja) スパッタリング装置
JPH09209138A (ja) スパッタリング方法
JPH08291382A (ja) 高周波スパッタリング用ターゲットのボンディング構造
JPS61117829A (ja) コンタクト電極の形成方法
JPH0660390B2 (ja) プレーナマグネトロン方式の微小孔を有する成膜対象基板への成膜方法およびその装置