JPH027393B2 - - Google Patents

Info

Publication number
JPH027393B2
JPH027393B2 JP58222749A JP22274983A JPH027393B2 JP H027393 B2 JPH027393 B2 JP H027393B2 JP 58222749 A JP58222749 A JP 58222749A JP 22274983 A JP22274983 A JP 22274983A JP H027393 B2 JPH027393 B2 JP H027393B2
Authority
JP
Japan
Prior art keywords
substrate
target
thin film
magnet
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58222749A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60115228A (ja
Inventor
Tadashi Serikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP22274983A priority Critical patent/JPS60115228A/ja
Publication of JPS60115228A publication Critical patent/JPS60115228A/ja
Publication of JPH027393B2 publication Critical patent/JPH027393B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP22274983A 1983-11-26 1983-11-26 スパツタリング装置 Granted JPS60115228A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22274983A JPS60115228A (ja) 1983-11-26 1983-11-26 スパツタリング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22274983A JPS60115228A (ja) 1983-11-26 1983-11-26 スパツタリング装置

Publications (2)

Publication Number Publication Date
JPS60115228A JPS60115228A (ja) 1985-06-21
JPH027393B2 true JPH027393B2 (enrdf_load_stackoverflow) 1990-02-16

Family

ID=16787302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22274983A Granted JPS60115228A (ja) 1983-11-26 1983-11-26 スパツタリング装置

Country Status (1)

Country Link
JP (1) JPS60115228A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3827758B2 (ja) * 1995-09-22 2006-09-27 株式会社半導体エネルギー研究所 薄膜作製方法及び薄膜作製装置
KR100421293B1 (ko) * 2001-12-21 2004-03-09 동부전자 주식회사 반도체 소자용 금속막 증착장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130277A (ja) * 1982-01-27 1983-08-03 Clarion Co Ltd マグネトロンスパツタ装置

Also Published As

Publication number Publication date
JPS60115228A (ja) 1985-06-21

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