JPH0585633B2 - - Google Patents

Info

Publication number
JPH0585633B2
JPH0585633B2 JP59249541A JP24954184A JPH0585633B2 JP H0585633 B2 JPH0585633 B2 JP H0585633B2 JP 59249541 A JP59249541 A JP 59249541A JP 24954184 A JP24954184 A JP 24954184A JP H0585633 B2 JPH0585633 B2 JP H0585633B2
Authority
JP
Japan
Prior art keywords
target
thin film
substrate
sputtering
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59249541A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61127862A (ja
Inventor
Masao Sakata
Hide Kobayashi
Katsuo Abe
Tsuneaki Kamei
Yutaka Saito
Hideki Tateishi
Susumu Aiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP24954184A priority Critical patent/JPS61127862A/ja
Publication of JPS61127862A publication Critical patent/JPS61127862A/ja
Publication of JPH0585633B2 publication Critical patent/JPH0585633B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP24954184A 1984-11-28 1984-11-28 薄膜形成方法及びその形成装置 Granted JPS61127862A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24954184A JPS61127862A (ja) 1984-11-28 1984-11-28 薄膜形成方法及びその形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24954184A JPS61127862A (ja) 1984-11-28 1984-11-28 薄膜形成方法及びその形成装置

Publications (2)

Publication Number Publication Date
JPS61127862A JPS61127862A (ja) 1986-06-16
JPH0585633B2 true JPH0585633B2 (enrdf_load_stackoverflow) 1993-12-08

Family

ID=17194518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24954184A Granted JPS61127862A (ja) 1984-11-28 1984-11-28 薄膜形成方法及びその形成装置

Country Status (1)

Country Link
JP (1) JPS61127862A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5490910A (en) * 1992-03-09 1996-02-13 Tulip Memory Systems, Inc. Circularly symmetric sputtering apparatus with hollow-cathode plasma devices
US5232569A (en) * 1992-03-09 1993-08-03 Tulip Memory Systems, Inc. Circularly symmetric, large-area, high-deposition-rate sputtering apparatus for the coating of disk substrates
US5292370A (en) * 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
JP3808917B2 (ja) * 1995-07-20 2006-08-16 オリンパス株式会社 薄膜の製造方法及び薄膜

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875839A (ja) * 1981-10-30 1983-05-07 Fujitsu Ltd スパツタ装置
JPS58161774A (ja) * 1982-03-17 1983-09-26 Fujitsu Ltd スパツタリング処理方法
JPS59180532A (ja) * 1983-03-31 1984-10-13 Toshiba Electric Equip Corp オ−バ−ヘツドプロジエクタ−
JPS59208156A (ja) * 1983-05-13 1984-11-26 Nippon Denso Co Ltd 分配型燃料噴射ポンプの燃料噴射時期調整装置

Also Published As

Publication number Publication date
JPS61127862A (ja) 1986-06-16

Similar Documents

Publication Publication Date Title
US4599135A (en) Thin film deposition
KR920002864B1 (ko) 플라즈마 처리방법 및 그 장치
US6444099B1 (en) Ionizing sputtering method
JPS60135573A (ja) スパツタリング方法及びその装置
JP2973058B2 (ja) 高真空・高速イオン処理装置
JPS627852A (ja) 薄膜形成方法
JPH0585633B2 (enrdf_load_stackoverflow)
JPS6187869A (ja) スパツタ装置
JP2821138B2 (ja) 薄膜形成方法及びその装置
JP4408987B2 (ja) スパッタ処理応用のプラズマ処理装置
JP2761875B2 (ja) バイアススパッタリング法による堆積膜形成装置
JPH01139762A (ja) スパッタリング装置
JPH0221296B2 (enrdf_load_stackoverflow)
JP2777657B2 (ja) プラズマ付着装置
JP2750430B2 (ja) プラズマ制御方法
JP2765788B2 (ja) プラズマcvd装置
Musil Basic properties of low-pressure plasma
JPH0867981A (ja) スパッタ装置
JP2621728B2 (ja) スパッタリング方法及びその装置
JPH08199355A (ja) スパッタリング装置及び方法
JPH08176818A (ja) スパッタリング装置
JP2675000B2 (ja) プラズマ処理装置
JPH02197567A (ja) プラズマスパッタ装置
JPH10204634A (ja) マグネトロンカソードおよびこれを備えたメタル配線スパッタ装置
JPH02282472A (ja) 薄膜製造装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees