JPH023538B2 - - Google Patents
Info
- Publication number
- JPH023538B2 JPH023538B2 JP19894682A JP19894682A JPH023538B2 JP H023538 B2 JPH023538 B2 JP H023538B2 JP 19894682 A JP19894682 A JP 19894682A JP 19894682 A JP19894682 A JP 19894682A JP H023538 B2 JPH023538 B2 JP H023538B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- target
- flat plate
- substrate
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 34
- 239000000203 mixture Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 238000002844 melting Methods 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002131 composite material Substances 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims 3
- 239000002210 silicon-based material Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 75
- 238000009826 distribution Methods 0.000 description 47
- 230000005284 excitation Effects 0.000 description 25
- 238000004544 sputter deposition Methods 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 239000002184 metal Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 230000003628 erosive effect Effects 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 229910016006 MoSi Inorganic materials 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000011796 hollow space material Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002994 synthetic fiber Polymers 0.000 description 2
- 229910052713 technetium Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 Mo+Si Chemical class 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19894682A JPS5989413A (ja) | 1982-11-15 | 1982-11-15 | Ｉｃの配線パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19894682A JPS5989413A (ja) | 1982-11-15 | 1982-11-15 | Ｉｃの配線パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5989413A JPS5989413A (ja) | 1984-05-23 |
| JPH023538B2 true JPH023538B2 (de) | 1990-01-24 |
Family
ID=16399584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19894682A Granted JPS5989413A (ja) | 1982-11-15 | 1982-11-15 | Ｉｃの配線パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5989413A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4610774A (en) * | 1984-11-14 | 1986-09-09 | Hitachi, Ltd. | Target for sputtering |
| JPS63202040A (ja) * | 1987-02-17 | 1988-08-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
-
1982
- 1982-11-15 JP JP19894682A patent/JPS5989413A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5989413A (ja) | 1984-05-23 |
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