JPWO2010004890A1 - 薄膜の成膜方法 - Google Patents
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- 238000000034 method Methods 0.000 claims abstract description 71
- 238000012545 processing Methods 0.000 claims abstract description 70
- 239000010409 thin film Substances 0.000 claims abstract description 50
- 238000004544 sputter deposition Methods 0.000 claims abstract description 23
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
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- 229910052715 tantalum Inorganic materials 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
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- 239000011800 void material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
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- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
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- 239000010935 stainless steel Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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Abstract
Description
このような目的を達成するために、本発明は、真空排気可能な処理室であって、基板を支持する第1の電極と、前記基板に対向するように配され、ターゲットを支持する第2の電極とを備える処理室に処理ガスを導入し、前記第1および第2の電極のそれぞれに高周波電源から異なる電力を印可すると共に、前記第2の電極に磁場を生成してプラズマを発生させ、凹状段差を有する前記基板の上にターゲット物質を成膜する薄膜の成膜方法であって、前記段差の底部への薄膜堆積を行う第1工程と、前記段差の底部に堆積した薄膜を再スパッタして、前記段差の内側壁への成膜を行う第2工程とを有し、前記第2工程における前記処理室の圧力を前記第1工程における該圧力よりも低く設定し、かつ、前記第2工程における第2の電極に供給される電力に対する第1の電極に供給される電力の比を前記第1工程における該電力比よりも大きく設定することを特徴とする。
図9は、図7に示す隣接する4つのマグネット21により閉じたカスプ磁場23を形成した場合、磁界と電界、電界と磁界で作る垂直な面にサイクロトン回転し、運動する方向を示している。
アスペクト比が2.857のトレンチ(ホール直径=0.35μm;ホール深さ1.0μm)を複数配置したシリコン基板を用意し、この基板上に図1のプラズマ処理装置を用いて窒化タンタル膜を成膜した。
反応条件を表1に示すように変更した以外は、実施例1と同様にして窒化タンタル膜を成膜した。
2段階の階段状のトレンチ形状(トレンチ開口幅=0.60μm;トレンチ底幅=0.20μm;ホール深さ0.60μm)を複数配置したシリコン基板を用意し、この基板上に図1のプラズマ処理装置を用いてチタンタングステン合金膜を成膜した。
反応条件を表2に示すように変更した以外は、実施例2と同様にしてチタンタングステン合金膜を成膜した。
Claims (11)
- 真空排気可能な処理室であって、基板を支持する第1の電極と、前記基板に対向するように配され、ターゲットを支持する第2の電極とを備える処理室に処理ガスを導入し、前記第1および第2の電極のそれぞれに高周波電源から異なる電力を印可すると共に、前記第2の電極に磁場を生成してプラズマを発生させ、凹状段差を有する前記基板の上にターゲット物質を成膜する薄膜の成膜方法であって、
前記段差の底部への薄膜堆積を行う第1工程と、
前記段差の底部に堆積した薄膜を再スパッタして、前記段差の内側壁への成膜を行う第2工程とを有し、
前記第2工程における前記処理室の圧力を前記第1工程における該圧力よりも低く設定し、かつ、前記第2工程における第2の電極に供給される電力に対する第1の電極に供給される電力の比を前記第1工程における該電力比よりも大きく設定することを特徴とする薄膜の成膜方法。 - 前記磁場はカスプ磁場であり、
前記処理室は、前記第2の電極の、前記ターゲットを支持する面と対向する面に配置され、前記第2の電極の、前記ターゲットを支持する面側にカスプ磁界を形成する複数のマグネットをさらに備え、
前記マグネットが、碁盤目状に複数連なる四角形の各角部に対応する位置に配置されており、前記各四角形の辺方向に隣接するマグネットの極性が反対の極性となっていることを特徴とする請求項1に記載の薄膜の成膜方法。 - 前記第1工程における前記処理室の圧力は2Paから27Paの範囲で選択して設定し、第2工程における前記処理室の圧力は0.2Paから2Paの範囲で選択して設定することを特徴とする請求項1に記載の薄膜の成膜方法。
- 前記段差の底部の膜厚に対する内側壁の最小膜厚の比が0.5以下であることを特徴とする請求項1に記載の薄膜の成膜方法。
- 前記第2の電極に給電する高周波電源の周波数は10MHzから300MHzの範囲にあることを特徴とする請求項1に記載の薄膜の成膜方法。
- 前記第2の電極に給電する高周波電源の電力を300Wから10000Wの範囲で選択して設定し、前記第1の電極に給電する高周波電源の電力を0Wから2000Wの範囲で選択して設定することを特徴とする請求項1に記載の薄膜の成膜方法。
- 前記段差の内部を成膜する際に、前記第1工程および第2工程は、この工程順序で少なくとも各1回実施されることを特徴とする請求項1に記載の薄膜の成膜方法。
- 前記第2の電極は、導電性を有する単一組成または複合組成の材料で構成されていることを特徴とする請求項1に記載の薄膜の成膜方法。
- 前記処理ガスは、少なくとも希ガスを含むガスであることを特徴とする請求項1に記載の薄膜の成膜方法。
- 前記処理ガスは、希ガスと反応性ガスとの混合ガスであり、反応性ガスは酸素及び窒素からなるガス群より選択された少なくとも1種であることを特徴とする請求項9に記載の薄膜の成膜方法。
- 前記第1工程と前記第2工程とで異なる処理ガスを使用することを特徴とする請求項9に記載の薄膜の成膜方法。
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PCT/JP2009/061752 WO2010004890A1 (ja) | 2008-07-11 | 2009-06-26 | 薄膜の成膜方法 |
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JP4763857B2 (ja) | 2008-12-29 | 2011-08-31 | キヤノンアネルバ株式会社 | 均一膜厚分布のためのスパッタ装置の磁界制御 |
US8846451B2 (en) * | 2010-07-30 | 2014-09-30 | Applied Materials, Inc. | Methods for depositing metal in high aspect ratio features |
US8563428B2 (en) * | 2010-09-17 | 2013-10-22 | Applied Materials, Inc. | Methods for depositing metal in high aspect ratio features |
JP5693175B2 (ja) * | 2010-11-25 | 2015-04-01 | 株式会社アルバック | スパッタリング方法 |
JP5458177B2 (ja) * | 2010-12-28 | 2014-04-02 | キヤノンアネルバ株式会社 | 半導体装置の製造方法および装置 |
WO2013099570A1 (ja) | 2011-12-27 | 2013-07-04 | キヤノンアネルバ株式会社 | 貴金属膜の連続成膜方法及び電子部品の連続製造方法 |
KR102127778B1 (ko) * | 2013-10-15 | 2020-06-29 | 삼성전자주식회사 | 반도체 장치의 제조 방법 및 이에 의해 제조된 반도체 장치 |
CN107794496A (zh) * | 2017-10-12 | 2018-03-13 | 中国科学院近代物理研究所 | 磁控溅射镀膜设备和磁控溅射镀膜方法 |
US20200048760A1 (en) * | 2018-08-13 | 2020-02-13 | Applied Materials, Inc. | High power impulse magnetron sputtering physical vapor deposition of tungsten films having improved bottom coverage |
CN111549315B (zh) * | 2020-06-23 | 2022-08-12 | 中建材玻璃新材料研究院集团有限公司 | 一种单层结构着色玻璃多种颜色的快速预制备方法 |
WO2023018758A1 (en) * | 2021-08-10 | 2023-02-16 | Virginia Commonwealth University | Sputtering machines, substrate holders, and sputtering processes with magnetic biasing |
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