Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co LtdfiledCriticalTokyo Shibaura Electric Co Ltd
Priority to JP57004715ApriorityCriticalpatent/JPS58122774A/ja
Publication of JPS58122774ApublicationCriticalpatent/JPS58122774A/ja
Publication of JPH023307B2publicationCriticalpatent/JPH023307B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
Local Oxidation Of Silicon
(AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices
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Semiconductor Integrated Circuits
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Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)