JPH023301B2 - - Google Patents

Info

Publication number
JPH023301B2
JPH023301B2 JP59246310A JP24631084A JPH023301B2 JP H023301 B2 JPH023301 B2 JP H023301B2 JP 59246310 A JP59246310 A JP 59246310A JP 24631084 A JP24631084 A JP 24631084A JP H023301 B2 JPH023301 B2 JP H023301B2
Authority
JP
Japan
Prior art keywords
insulating film
film
forming
layer
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59246310A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61125150A (ja
Inventor
Kikuo Yamabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59246310A priority Critical patent/JPS61125150A/ja
Publication of JPS61125150A publication Critical patent/JPS61125150A/ja
Publication of JPH023301B2 publication Critical patent/JPH023301B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59246310A 1984-11-22 1984-11-22 ３次元半導体装置の製造方法 Granted JPS61125150A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59246310A JPS61125150A (ja) 1984-11-22 1984-11-22 ３次元半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59246310A JPS61125150A (ja) 1984-11-22 1984-11-22 ３次元半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61125150A JPS61125150A (ja) 1986-06-12
JPH023301B2 true JPH023301B2 (enExample) 1990-01-23

Family

ID=17146648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59246310A Granted JPS61125150A (ja) 1984-11-22 1984-11-22 ３次元半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61125150A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69026503T2 (de) * 1990-07-31 1996-11-14 Ibm Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten selbstjustierten Feldeffekttransistoren aus Polisilizium und sich daraus ergebende Struktur
US5489554A (en) * 1992-07-21 1996-02-06 Hughes Aircraft Company Method of making a 3-dimensional circuit assembly having electrical contacts that extend through the IC layer
TW335503B (en) 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method

Also Published As

Publication number Publication date
JPS61125150A (ja) 1986-06-12

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Legal Events

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EXPY Cancellation because of completion of term