JPH0232781B2 - - Google Patents

Info

Publication number
JPH0232781B2
JPH0232781B2 JP58222929A JP22292983A JPH0232781B2 JP H0232781 B2 JPH0232781 B2 JP H0232781B2 JP 58222929 A JP58222929 A JP 58222929A JP 22292983 A JP22292983 A JP 22292983A JP H0232781 B2 JPH0232781 B2 JP H0232781B2
Authority
JP
Japan
Prior art keywords
cell
molecular beam
source material
substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58222929A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60115218A (ja
Inventor
Shunichi Murakami
Tetsuo Ishida
Sumio Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP22292983A priority Critical patent/JPS60115218A/ja
Publication of JPS60115218A publication Critical patent/JPS60115218A/ja
Publication of JPH0232781B2 publication Critical patent/JPH0232781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP22292983A 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置 Granted JPS60115218A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22292983A JPS60115218A (ja) 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22292983A JPS60115218A (ja) 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置

Publications (2)

Publication Number Publication Date
JPS60115218A JPS60115218A (ja) 1985-06-21
JPH0232781B2 true JPH0232781B2 (enrdf_load_stackoverflow) 1990-07-23

Family

ID=16790072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22292983A Granted JPS60115218A (ja) 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置

Country Status (1)

Country Link
JP (1) JPS60115218A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08117472A (ja) * 1994-10-21 1996-05-14 Hirose Mfg Co Ltd 全回転かまの外かま

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236112A (ja) * 1985-04-12 1986-10-21 Hitachi Ltd 分子線源
JPS61251116A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 分子線結晶成長装置用分子線源

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812233A (ja) * 1981-06-15 1983-01-24 松下電工株式会社 ラツチングリレ−駆動回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08117472A (ja) * 1994-10-21 1996-05-14 Hirose Mfg Co Ltd 全回転かまの外かま

Also Published As

Publication number Publication date
JPS60115218A (ja) 1985-06-21

Similar Documents

Publication Publication Date Title
US4825809A (en) Chemical vapor deposition apparatus having an ejecting head for ejecting a laminated reaction gas flow
KR100980729B1 (ko) 증착 공정용 다중 노즐 증발원
JP4175665B2 (ja) 単一坩堝とかかる坩堝を利用した流出（エフュージョン）源
JPH0232781B2 (enrdf_load_stackoverflow)
JP2911173B2 (ja) 分子線エピタキシー装置噴出セル内にるつぼを備えた装置
WO2021003706A1 (zh) 晶片承载盘与晶片外延装置
JPS60115219A (ja) 薄膜形成装置用蒸発源セル
JP3534866B2 (ja) 気相成長方法
JPH0136977B2 (enrdf_load_stackoverflow)
JPH04354119A (ja) 気相成長装置の基板支持構造
JP2582105Y2 (ja) 化学気相成長装置
JP2504880Y2 (ja) 縦型気相成長装置用噴射ノズル
JPS6159279B2 (enrdf_load_stackoverflow)
JPH0345953Y2 (enrdf_load_stackoverflow)
JP2002009002A (ja) 薄膜形成装置
JPS58119632A (ja) 縦型気相成長装置用サセプタ
JPH019153Y2 (enrdf_load_stackoverflow)
JPH0519330Y2 (enrdf_load_stackoverflow)
JPH0330269U (enrdf_load_stackoverflow)
JPH05152350A (ja) 気相エピタキシヤル成長装置
JPS5964594A (ja) 分子線結晶成長用坩堝
JPS61177713A (ja) 炭化珪素化合物半導体の気相エピタキシヤル成長装置
EP0205963B1 (en) Method and apparatus for molecular beam epitaxial growth
JPH0395923A (ja) 分子線結晶成長装置
JPH0139205B2 (enrdf_load_stackoverflow)