JPS6159279B2 - - Google Patents
Info
- Publication number
- JPS6159279B2 JPS6159279B2 JP11398079A JP11398079A JPS6159279B2 JP S6159279 B2 JPS6159279 B2 JP S6159279B2 JP 11398079 A JP11398079 A JP 11398079A JP 11398079 A JP11398079 A JP 11398079A JP S6159279 B2 JPS6159279 B2 JP S6159279B2
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- gas
- guide
- silicon
- flow adjustment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 238000000407 epitaxy Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 230000006698 induction Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021383 artificial graphite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11398079A JPS5637296A (en) | 1979-09-05 | 1979-09-05 | Epitaxially growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11398079A JPS5637296A (en) | 1979-09-05 | 1979-09-05 | Epitaxially growing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5637296A JPS5637296A (en) | 1981-04-10 |
| JPS6159279B2 true JPS6159279B2 (enrdf_load_stackoverflow) | 1986-12-15 |
Family
ID=14626030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11398079A Granted JPS5637296A (en) | 1979-09-05 | 1979-09-05 | Epitaxially growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637296A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0445237Y2 (enrdf_load_stackoverflow) * | 1985-03-14 | 1992-10-23 | ||
| JPS6394633A (ja) * | 1986-10-09 | 1988-04-25 | Hitachi Electronics Eng Co Ltd | 気相反応装置 |
| JPH01294596A (ja) * | 1988-05-20 | 1989-11-28 | Toshiba Ceramics Co Ltd | 組立式バレル型サセプタ |
| JP4606642B2 (ja) * | 2001-05-17 | 2011-01-05 | 住友化学株式会社 | 半導体製造装置及び化合物半導体の製造方法 |
-
1979
- 1979-09-05 JP JP11398079A patent/JPS5637296A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5637296A (en) | 1981-04-10 |
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