JPS5637296A - Epitaxially growing apparatus - Google Patents
Epitaxially growing apparatusInfo
- Publication number
- JPS5637296A JPS5637296A JP11398079A JP11398079A JPS5637296A JP S5637296 A JPS5637296 A JP S5637296A JP 11398079 A JP11398079 A JP 11398079A JP 11398079 A JP11398079 A JP 11398079A JP S5637296 A JPS5637296 A JP S5637296A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- gas
- guide
- silicon carbide
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- 229910021383 artificial graphite Inorganic materials 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 239000003643 water by type Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11398079A JPS5637296A (en) | 1979-09-05 | 1979-09-05 | Epitaxially growing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11398079A JPS5637296A (en) | 1979-09-05 | 1979-09-05 | Epitaxially growing apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5637296A true JPS5637296A (en) | 1981-04-10 |
JPS6159279B2 JPS6159279B2 (enrdf_load_stackoverflow) | 1986-12-15 |
Family
ID=14626030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11398079A Granted JPS5637296A (en) | 1979-09-05 | 1979-09-05 | Epitaxially growing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5637296A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61153337U (enrdf_load_stackoverflow) * | 1985-03-14 | 1986-09-22 | ||
JPS6394633A (ja) * | 1986-10-09 | 1988-04-25 | Hitachi Electronics Eng Co Ltd | 気相反応装置 |
JPH01294596A (ja) * | 1988-05-20 | 1989-11-28 | Toshiba Ceramics Co Ltd | 組立式バレル型サセプタ |
JP2002343723A (ja) * | 2001-05-17 | 2002-11-29 | Sumitomo Chem Co Ltd | 半導体製造装置及び化合物半導体の製造方法 |
-
1979
- 1979-09-05 JP JP11398079A patent/JPS5637296A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61153337U (enrdf_load_stackoverflow) * | 1985-03-14 | 1986-09-22 | ||
JPS6394633A (ja) * | 1986-10-09 | 1988-04-25 | Hitachi Electronics Eng Co Ltd | 気相反応装置 |
JPH01294596A (ja) * | 1988-05-20 | 1989-11-28 | Toshiba Ceramics Co Ltd | 組立式バレル型サセプタ |
JP2002343723A (ja) * | 2001-05-17 | 2002-11-29 | Sumitomo Chem Co Ltd | 半導体製造装置及び化合物半導体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6159279B2 (enrdf_load_stackoverflow) | 1986-12-15 |
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