JPS60115218A - 分子ビームエピタキシャル成長装置 - Google Patents

分子ビームエピタキシャル成長装置

Info

Publication number
JPS60115218A
JPS60115218A JP22292983A JP22292983A JPS60115218A JP S60115218 A JPS60115218 A JP S60115218A JP 22292983 A JP22292983 A JP 22292983A JP 22292983 A JP22292983 A JP 22292983A JP S60115218 A JPS60115218 A JP S60115218A
Authority
JP
Japan
Prior art keywords
cell
thin film
molecular beam
forming apparatus
source cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22292983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0232781B2 (enrdf_load_stackoverflow
Inventor
Shunichi Murakami
俊一 村上
Tetsuo Ishida
哲夫 石田
Sumio Sakai
酒井　純朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Anelva Corp filed Critical Canon Anelva Corp
Priority to JP22292983A priority Critical patent/JPS60115218A/ja
Publication of JPS60115218A publication Critical patent/JPS60115218A/ja
Publication of JPH0232781B2 publication Critical patent/JPH0232781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP22292983A 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置 Granted JPS60115218A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22292983A JPS60115218A (ja) 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22292983A JPS60115218A (ja) 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置

Publications (2)

Publication Number Publication Date
JPS60115218A true JPS60115218A (ja) 1985-06-21
JPH0232781B2 JPH0232781B2 (enrdf_load_stackoverflow) 1990-07-23

Family

ID=16790072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22292983A Granted JPS60115218A (ja) 1983-11-26 1983-11-26 分子ビームエピタキシャル成長装置

Country Status (1)

Country Link
JP (1) JPS60115218A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236112A (ja) * 1985-04-12 1986-10-21 Hitachi Ltd 分子線源
JPS61251116A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 分子線結晶成長装置用分子線源

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08117472A (ja) * 1994-10-21 1996-05-14 Hirose Mfg Co Ltd 全回転かまの外かま

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812233A (ja) * 1981-06-15 1983-01-24 松下電工株式会社 ラツチングリレ−駆動回路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812233A (ja) * 1981-06-15 1983-01-24 松下電工株式会社 ラツチングリレ−駆動回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236112A (ja) * 1985-04-12 1986-10-21 Hitachi Ltd 分子線源
JPS61251116A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 分子線結晶成長装置用分子線源

Also Published As

Publication number Publication date
JPH0232781B2 (enrdf_load_stackoverflow) 1990-07-23

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