JPH0139205B2 - - Google Patents
Info
- Publication number
- JPH0139205B2 JPH0139205B2 JP55104147A JP10414780A JPH0139205B2 JP H0139205 B2 JPH0139205 B2 JP H0139205B2 JP 55104147 A JP55104147 A JP 55104147A JP 10414780 A JP10414780 A JP 10414780A JP H0139205 B2 JPH0139205 B2 JP H0139205B2
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- chamber
- small
- beam source
- molecular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10414780A JPS5730321A (en) | 1980-07-29 | 1980-07-29 | Molecular beam source for molecular beam epitaxy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10414780A JPS5730321A (en) | 1980-07-29 | 1980-07-29 | Molecular beam source for molecular beam epitaxy |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5730321A JPS5730321A (en) | 1982-02-18 |
JPH0139205B2 true JPH0139205B2 (enrdf_load_stackoverflow) | 1989-08-18 |
Family
ID=14372964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10414780A Granted JPS5730321A (en) | 1980-07-29 | 1980-07-29 | Molecular beam source for molecular beam epitaxy |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5730321A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2572099B1 (fr) * | 1984-10-24 | 1987-03-20 | Comp Generale Electricite | Generateur de jets moleculaires par craquage thermique pour la fabrication de semi-conducteurs par depot epitaxial |
JPH01278493A (ja) * | 1988-04-28 | 1989-11-08 | Nec Corp | 分子線発生装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS568186Y2 (enrdf_load_stackoverflow) * | 1976-04-20 | 1981-02-23 |
-
1980
- 1980-07-29 JP JP10414780A patent/JPS5730321A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5730321A (en) | 1982-02-18 |
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