JPH0139205B2 - - Google Patents

Info

Publication number
JPH0139205B2
JPH0139205B2 JP55104147A JP10414780A JPH0139205B2 JP H0139205 B2 JPH0139205 B2 JP H0139205B2 JP 55104147 A JP55104147 A JP 55104147A JP 10414780 A JP10414780 A JP 10414780A JP H0139205 B2 JPH0139205 B2 JP H0139205B2
Authority
JP
Japan
Prior art keywords
molecular beam
chamber
small
beam source
molecular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55104147A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5730321A (en
Inventor
Junji Saito
Sukehisa Hyamizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10414780A priority Critical patent/JPS5730321A/ja
Publication of JPS5730321A publication Critical patent/JPS5730321A/ja
Publication of JPH0139205B2 publication Critical patent/JPH0139205B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP10414780A 1980-07-29 1980-07-29 Molecular beam source for molecular beam epitaxy Granted JPS5730321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10414780A JPS5730321A (en) 1980-07-29 1980-07-29 Molecular beam source for molecular beam epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10414780A JPS5730321A (en) 1980-07-29 1980-07-29 Molecular beam source for molecular beam epitaxy

Publications (2)

Publication Number Publication Date
JPS5730321A JPS5730321A (en) 1982-02-18
JPH0139205B2 true JPH0139205B2 (enrdf_load_stackoverflow) 1989-08-18

Family

ID=14372964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10414780A Granted JPS5730321A (en) 1980-07-29 1980-07-29 Molecular beam source for molecular beam epitaxy

Country Status (1)

Country Link
JP (1) JPS5730321A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572099B1 (fr) * 1984-10-24 1987-03-20 Comp Generale Electricite Generateur de jets moleculaires par craquage thermique pour la fabrication de semi-conducteurs par depot epitaxial
JPH01278493A (ja) * 1988-04-28 1989-11-08 Nec Corp 分子線発生装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568186Y2 (enrdf_load_stackoverflow) * 1976-04-20 1981-02-23

Also Published As

Publication number Publication date
JPS5730321A (en) 1982-02-18

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