JPH0353275B2 - - Google Patents

Info

Publication number
JPH0353275B2
JPH0353275B2 JP24378984A JP24378984A JPH0353275B2 JP H0353275 B2 JPH0353275 B2 JP H0353275B2 JP 24378984 A JP24378984 A JP 24378984A JP 24378984 A JP24378984 A JP 24378984A JP H0353275 B2 JPH0353275 B2 JP H0353275B2
Authority
JP
Japan
Prior art keywords
evaporated
molecular beam
substance
cell
beam cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP24378984A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61122192A (ja
Inventor
Shunichi Murakami
Tetsuo Ishida
Sumio Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP24378984A priority Critical patent/JPS61122192A/ja
Publication of JPS61122192A publication Critical patent/JPS61122192A/ja
Publication of JPH0353275B2 publication Critical patent/JPH0353275B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP24378984A 1984-11-19 1984-11-19 分子線エピタキシャル成長装置 Granted JPS61122192A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24378984A JPS61122192A (ja) 1984-11-19 1984-11-19 分子線エピタキシャル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24378984A JPS61122192A (ja) 1984-11-19 1984-11-19 分子線エピタキシャル成長装置

Publications (2)

Publication Number Publication Date
JPS61122192A JPS61122192A (ja) 1986-06-10
JPH0353275B2 true JPH0353275B2 (enrdf_load_stackoverflow) 1991-08-14

Family

ID=17108981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24378984A Granted JPS61122192A (ja) 1984-11-19 1984-11-19 分子線エピタキシャル成長装置

Country Status (1)

Country Link
JP (1) JPS61122192A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6551405B1 (en) 2000-09-22 2003-04-22 The Board Of Trustees Of The University Of Arkansas Tool and method for in situ vapor phase deposition source material reloading and maintenance

Also Published As

Publication number Publication date
JPS61122192A (ja) 1986-06-10

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