JPH0345953Y2 - - Google Patents
Info
- Publication number
- JPH0345953Y2 JPH0345953Y2 JP3780887U JP3780887U JPH0345953Y2 JP H0345953 Y2 JPH0345953 Y2 JP H0345953Y2 JP 3780887 U JP3780887 U JP 3780887U JP 3780887 U JP3780887 U JP 3780887U JP H0345953 Y2 JPH0345953 Y2 JP H0345953Y2
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- crucible
- beam source
- opening
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3780887U JPH0345953Y2 (enrdf_load_stackoverflow) | 1987-03-13 | 1987-03-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3780887U JPH0345953Y2 (enrdf_load_stackoverflow) | 1987-03-13 | 1987-03-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63145866U JPS63145866U (enrdf_load_stackoverflow) | 1988-09-27 |
| JPH0345953Y2 true JPH0345953Y2 (enrdf_load_stackoverflow) | 1991-09-27 |
Family
ID=30849467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3780887U Expired JPH0345953Y2 (enrdf_load_stackoverflow) | 1987-03-13 | 1987-03-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0345953Y2 (enrdf_load_stackoverflow) |
-
1987
- 1987-03-13 JP JP3780887U patent/JPH0345953Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63145866U (enrdf_load_stackoverflow) | 1988-09-27 |
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