JPH0231491B2 - - Google Patents
Info
- Publication number
- JPH0231491B2 JPH0231491B2 JP59113423A JP11342384A JPH0231491B2 JP H0231491 B2 JPH0231491 B2 JP H0231491B2 JP 59113423 A JP59113423 A JP 59113423A JP 11342384 A JP11342384 A JP 11342384A JP H0231491 B2 JPH0231491 B2 JP H0231491B2
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- chamber
- radicals
- substrate
- growth chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11342384A JPS60257130A (ja) | 1984-06-01 | 1984-06-01 | ラジカルビ−ムを用いた薄膜形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11342384A JPS60257130A (ja) | 1984-06-01 | 1984-06-01 | ラジカルビ−ムを用いた薄膜形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60257130A JPS60257130A (ja) | 1985-12-18 |
JPH0231491B2 true JPH0231491B2 (cs) | 1990-07-13 |
Family
ID=14611859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11342384A Granted JPS60257130A (ja) | 1984-06-01 | 1984-06-01 | ラジカルビ−ムを用いた薄膜形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60257130A (cs) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6132417A (ja) * | 1984-07-24 | 1986-02-15 | Mitsubishi Electric Corp | 薄膜形成装置 |
NL1017849C2 (nl) * | 2001-04-16 | 2002-10-30 | Univ Eindhoven Tech | Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5244174A (en) * | 1975-10-06 | 1977-04-06 | Hitachi Ltd | Plasma treatment device |
JPS57159016A (en) * | 1981-03-26 | 1982-10-01 | Sumitomo Electric Ind Ltd | Manufacture of amorphous silicon film |
-
1984
- 1984-06-01 JP JP11342384A patent/JPS60257130A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60257130A (ja) | 1985-12-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |