JPH0228254B2 - - Google Patents

Info

Publication number
JPH0228254B2
JPH0228254B2 JP59221524A JP22152484A JPH0228254B2 JP H0228254 B2 JPH0228254 B2 JP H0228254B2 JP 59221524 A JP59221524 A JP 59221524A JP 22152484 A JP22152484 A JP 22152484A JP H0228254 B2 JPH0228254 B2 JP H0228254B2
Authority
JP
Japan
Prior art keywords
channel region
view
region
sectional
carrier concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59221524A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6199381A (ja
Inventor
Shigeru Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59221524A priority Critical patent/JPS6199381A/ja
Publication of JPS6199381A publication Critical patent/JPS6199381A/ja
Publication of JPH0228254B2 publication Critical patent/JPH0228254B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59221524A 1984-10-22 1984-10-22 電界効果トランジスタ及びその製造方法 Granted JPS6199381A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59221524A JPS6199381A (ja) 1984-10-22 1984-10-22 電界効果トランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59221524A JPS6199381A (ja) 1984-10-22 1984-10-22 電界効果トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6199381A JPS6199381A (ja) 1986-05-17
JPH0228254B2 true JPH0228254B2 (en, 2012) 1990-06-22

Family

ID=16768059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59221524A Granted JPS6199381A (ja) 1984-10-22 1984-10-22 電界効果トランジスタ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS6199381A (en, 2012)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63153817A (ja) * 1986-12-17 1988-06-27 Fujitsu Ltd 半導体装置の製造方法
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact
JP2509743Y2 (ja) * 1990-08-28 1996-09-04 矢崎総業株式会社 コネクタ
JP2573753B2 (ja) * 1991-04-01 1997-01-22 矢崎総業株式会社 コネクタ
DE69510298T2 (de) 1994-10-27 2000-02-17 Sumitomo Electric Industries, Ltd. Verbinderanordnung

Also Published As

Publication number Publication date
JPS6199381A (ja) 1986-05-17

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