JPH02280315A - 電子ビーム直接描画装置 - Google Patents

電子ビーム直接描画装置

Info

Publication number
JPH02280315A
JPH02280315A JP1102212A JP10221289A JPH02280315A JP H02280315 A JPH02280315 A JP H02280315A JP 1102212 A JP1102212 A JP 1102212A JP 10221289 A JP10221289 A JP 10221289A JP H02280315 A JPH02280315 A JP H02280315A
Authority
JP
Japan
Prior art keywords
dot
pattern
memory
electron beam
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1102212A
Other languages
English (en)
Japanese (ja)
Inventor
Hiroaki Tobuse
戸伏　広明
Eishin Murakami
村上　英信
Masashi Kamio
神尾　昌司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1102212A priority Critical patent/JPH02280315A/ja
Priority to CA002010414A priority patent/CA2010414C/en
Priority to DE4007021A priority patent/DE4007021A1/de
Priority to US07/511,788 priority patent/US5005138A/en
Publication of JPH02280315A publication Critical patent/JPH02280315A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S347/00—Incremental printing of symbolic information
    • Y10S347/90—Data processing for electrostatic recording

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Facsimile Scanning Arrangements (AREA)
JP1102212A 1989-04-20 1989-04-20 電子ビーム直接描画装置 Pending JPH02280315A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1102212A JPH02280315A (ja) 1989-04-20 1989-04-20 電子ビーム直接描画装置
CA002010414A CA2010414C (en) 1989-04-20 1990-02-20 Electron beam direct printing apparatus
DE4007021A DE4007021A1 (de) 1989-04-20 1990-03-06 Elektronenstrahl-direktdruckgeraet
US07/511,788 US5005138A (en) 1989-04-20 1990-04-20 Electron beam direct printing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1102212A JPH02280315A (ja) 1989-04-20 1989-04-20 電子ビーム直接描画装置

Publications (1)

Publication Number Publication Date
JPH02280315A true JPH02280315A (ja) 1990-11-16

Family

ID=14321354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1102212A Pending JPH02280315A (ja) 1989-04-20 1989-04-20 電子ビーム直接描画装置

Country Status (4)

Country Link
US (1) US5005138A (OSRAM)
JP (1) JPH02280315A (OSRAM)
CA (1) CA2010414C (OSRAM)
DE (1) DE4007021A1 (OSRAM)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013508972A (ja) * 2009-10-21 2013-03-07 ディー・ツー・エス・インコーポレイテッド 引き込みショットを用いて、成形荷電粒子ビーム書込装置により書き込まれるパターンをフラクチャリングするための方法
US8828628B2 (en) 2008-09-01 2014-09-09 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US8900778B2 (en) 2008-09-01 2014-12-02 D2S, Inc. Method for forming circular patterns on a surface
US8916315B2 (en) 2009-08-26 2014-12-23 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9038003B2 (en) 2012-04-18 2015-05-19 D2S, Inc. Method and system for critical dimension uniformity using charged particle beam lithography
US9043734B2 (en) 2008-09-01 2015-05-26 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US9057956B2 (en) 2011-02-28 2015-06-16 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9091946B2 (en) 2011-04-26 2015-07-28 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9164372B2 (en) 2009-08-26 2015-10-20 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9372391B2 (en) 2008-09-01 2016-06-21 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US9400857B2 (en) 2011-09-19 2016-07-26 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9859100B2 (en) 2012-04-18 2018-01-02 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0447241B1 (en) * 1990-03-14 1996-06-12 Fujitsu Limited Electron beam exposure system having an improved data transfer efficiency
US5751594A (en) * 1993-03-16 1998-05-12 Emc Corporation Aperture control system for printed circuit board fabrication
US5781447A (en) * 1993-08-13 1998-07-14 Micron Eletronics, Inc. System for recreating a printed circuit board from disjointly formatted data
US5909658A (en) * 1996-06-18 1999-06-01 International Business Machines Corporation High speed electron beam lithography pattern processing system
JP3940310B2 (ja) * 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
WO2006076740A2 (en) * 2005-01-14 2006-07-20 Arradiance, Inc. Synchronous raster scanning lithographic system
JP5063320B2 (ja) * 2007-12-11 2012-10-31 株式会社ニューフレアテクノロジー 描画装置及び描画データの変換方法
JP2010028206A (ja) * 2008-07-15 2010-02-04 Canon Inc 画像形成システム、画像形成装置、画像処理装置および画像形成方法
US10312091B1 (en) * 2015-10-13 2019-06-04 Multibeam Corporation Secure permanent integrated circuit personalization
US10937630B1 (en) 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3815094A (en) * 1970-12-15 1974-06-04 Micro Bit Corp Electron beam type computer output on microfilm printer
US3810165A (en) * 1971-12-28 1974-05-07 Xerox Corp Electronic display device
JPS5456769A (en) * 1977-10-14 1979-05-08 Cho Lsi Gijutsu Kenkyu Kumiai Electron beam exposure device
JPS62154729A (ja) * 1985-12-27 1987-07-09 Hitachi Ltd 電子線描画装置
JPS6431418A (en) * 1987-07-28 1989-02-01 Toshiba Machine Co Ltd Charged particle beam lithography equipment
CA1279732C (en) * 1987-07-30 1991-01-29 Hiroaki Tobuse Electron beam direct drawing device

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9372391B2 (en) 2008-09-01 2016-06-21 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US8900778B2 (en) 2008-09-01 2014-12-02 D2S, Inc. Method for forming circular patterns on a surface
US9625809B2 (en) 2008-09-01 2017-04-18 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US10101648B2 (en) 2008-09-01 2018-10-16 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9043734B2 (en) 2008-09-01 2015-05-26 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US8828628B2 (en) 2008-09-01 2014-09-09 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US9715169B2 (en) 2008-09-01 2017-07-25 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9274412B2 (en) 2008-09-01 2016-03-01 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US9268214B2 (en) 2008-09-01 2016-02-23 D2S, Inc. Method for forming circular patterns on a surface
US9164372B2 (en) 2009-08-26 2015-10-20 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US8916315B2 (en) 2009-08-26 2014-12-23 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
JP2013508972A (ja) * 2009-10-21 2013-03-07 ディー・ツー・エス・インコーポレイテッド 引き込みショットを用いて、成形荷電粒子ビーム書込装置により書き込まれるパターンをフラクチャリングするための方法
US9057956B2 (en) 2011-02-28 2015-06-16 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9091946B2 (en) 2011-04-26 2015-07-28 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9465297B2 (en) 2011-06-25 2016-10-11 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9400857B2 (en) 2011-09-19 2016-07-26 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
US10031413B2 (en) 2011-09-19 2018-07-24 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
US9859100B2 (en) 2012-04-18 2018-01-02 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
US9038003B2 (en) 2012-04-18 2015-05-19 D2S, Inc. Method and system for critical dimension uniformity using charged particle beam lithography
US10431422B2 (en) 2012-04-18 2019-10-01 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography

Also Published As

Publication number Publication date
US5005138A (en) 1991-04-02
CA2010414C (en) 1993-07-20
CA2010414A1 (en) 1990-10-20
DE4007021C2 (OSRAM) 1993-05-13
DE4007021A1 (de) 1990-10-25

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