CA2010414C - Electron beam direct printing apparatus - Google Patents

Electron beam direct printing apparatus

Info

Publication number
CA2010414C
CA2010414C CA002010414A CA2010414A CA2010414C CA 2010414 C CA2010414 C CA 2010414C CA 002010414 A CA002010414 A CA 002010414A CA 2010414 A CA2010414 A CA 2010414A CA 2010414 C CA2010414 C CA 2010414C
Authority
CA
Canada
Prior art keywords
data
electron beam
scanning
deflection
printing pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002010414A
Other languages
English (en)
French (fr)
Other versions
CA2010414A1 (en
Inventor
Hiroaki Tobuse
Hidenobu Murakami
Masashi Kamio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CA2010414A1 publication Critical patent/CA2010414A1/en
Application granted granted Critical
Publication of CA2010414C publication Critical patent/CA2010414C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S347/00—Incremental printing of symbolic information
    • Y10S347/90—Data processing for electrostatic recording

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Facsimile Scanning Arrangements (AREA)
CA002010414A 1989-04-20 1990-02-20 Electron beam direct printing apparatus Expired - Fee Related CA2010414C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1102212A JPH02280315A (ja) 1989-04-20 1989-04-20 電子ビーム直接描画装置
JP1-102212 1989-04-20

Publications (2)

Publication Number Publication Date
CA2010414A1 CA2010414A1 (en) 1990-10-20
CA2010414C true CA2010414C (en) 1993-07-20

Family

ID=14321354

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002010414A Expired - Fee Related CA2010414C (en) 1989-04-20 1990-02-20 Electron beam direct printing apparatus

Country Status (4)

Country Link
US (1) US5005138A (OSRAM)
JP (1) JPH02280315A (OSRAM)
CA (1) CA2010414C (OSRAM)
DE (1) DE4007021A1 (OSRAM)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0447241B1 (en) * 1990-03-14 1996-06-12 Fujitsu Limited Electron beam exposure system having an improved data transfer efficiency
US5751594A (en) * 1993-03-16 1998-05-12 Emc Corporation Aperture control system for printed circuit board fabrication
US5781447A (en) * 1993-08-13 1998-07-14 Micron Eletronics, Inc. System for recreating a printed circuit board from disjointly formatted data
US5909658A (en) * 1996-06-18 1999-06-01 International Business Machines Corporation High speed electron beam lithography pattern processing system
JP3940310B2 (ja) * 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
WO2006076740A2 (en) * 2005-01-14 2006-07-20 Arradiance, Inc. Synchronous raster scanning lithographic system
JP5063320B2 (ja) * 2007-12-11 2012-10-31 株式会社ニューフレアテクノロジー 描画装置及び描画データの変換方法
JP2010028206A (ja) * 2008-07-15 2010-02-04 Canon Inc 画像形成システム、画像形成装置、画像処理装置および画像形成方法
US7901850B2 (en) 2008-09-01 2011-03-08 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8039176B2 (en) 2009-08-26 2011-10-18 D2S, Inc. Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
US7985514B2 (en) * 2009-10-21 2011-07-26 D2S, Inc. Method for fracturing a pattern for writing with a shaped charged particle beam writing system using dragged shots
US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US8057970B2 (en) 2008-09-01 2011-11-15 D2S, Inc. Method and system for forming circular patterns on a surface
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US20120278770A1 (en) 2011-04-26 2012-11-01 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9164372B2 (en) 2009-08-26 2015-10-20 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9057956B2 (en) 2011-02-28 2015-06-16 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
KR102154105B1 (ko) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템
KR20150001834A (ko) 2012-04-18 2015-01-06 디2에스, 인코포레이티드 하전 입자 빔 리소그래피를 사용한 임계 치수 균일성을 위한 방법 및 시스템
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
US10312091B1 (en) * 2015-10-13 2019-06-04 Multibeam Corporation Secure permanent integrated circuit personalization
US10937630B1 (en) 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3815094A (en) * 1970-12-15 1974-06-04 Micro Bit Corp Electron beam type computer output on microfilm printer
US3810165A (en) * 1971-12-28 1974-05-07 Xerox Corp Electronic display device
JPS5456769A (en) * 1977-10-14 1979-05-08 Cho Lsi Gijutsu Kenkyu Kumiai Electron beam exposure device
JPS62154729A (ja) * 1985-12-27 1987-07-09 Hitachi Ltd 電子線描画装置
JPS6431418A (en) * 1987-07-28 1989-02-01 Toshiba Machine Co Ltd Charged particle beam lithography equipment
CA1279732C (en) * 1987-07-30 1991-01-29 Hiroaki Tobuse Electron beam direct drawing device

Also Published As

Publication number Publication date
US5005138A (en) 1991-04-02
CA2010414A1 (en) 1990-10-20
JPH02280315A (ja) 1990-11-16
DE4007021C2 (OSRAM) 1993-05-13
DE4007021A1 (de) 1990-10-25

Similar Documents

Publication Publication Date Title
CA2010414C (en) Electron beam direct printing apparatus
CA1125441A (en) Electron beam exposure system and an apparatus for carrying out the same
US4870286A (en) Electron beam direct drawing device
WO1985001906A1 (en) Data handling system for a pattern generator
US11789372B2 (en) Writing data generating method and multi charged particle beam writing apparatus
KR102293626B1 (ko) 묘화 데이터 생성 방법, 프로그램을 기록한 컴퓨터로 판독 가능한 기록 매체 및 멀티 하전 입자빔 묘화 장치
JPS63141445A (ja) ハーフトーン表示発生方法及びその装置
JPH0357608B2 (OSRAM)
US6968531B2 (en) Exposure method utilizing optical proximity corrected exposure patterns, an apparatus for generating optical proximity corrected exposure data, and an exposure apparatus for optical proximity corrected exposure data
US7476880B2 (en) Writing a circuit design pattern with shaped particle beam flashes
US4484077A (en) Exposure system and method using an electron beam
US4468566A (en) Corpuscular beam control circuit arrangement
JP3274149B2 (ja) 荷電ビーム描画方法
EP0029857B1 (en) Electron beam projecting system
JPH05226235A (ja) 電子ビ−ム描画のデ−タ変換方法
JP3357160B2 (ja) 電子線描画方法および電子線描画システム
JPS62264344A (ja) アドレス制御装置
JPH0722106B2 (ja) 電子ビーム描画装置
JPS6230491B2 (OSRAM)
JPS63150919A (ja) 荷電ビ−ム露光装置におけるデ−タ検証方法
JP2780272B2 (ja) 露光装置
JPH03108712A (ja) 電子ビーム描画装置
JPH05144912A (ja) 電子ビーム露光方法および電子ビーム露光装置
JPS60119719A (ja) 図形発生装置
JPH0779074B2 (ja) 電子ビーム露光方法

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed