JPH02275675A - Ｍｏｓ型半導体装置 - Google Patents

Ｍｏｓ型半導体装置

Info

Publication number
JPH02275675A
JPH02275675A JP1318471A JP31847189A JPH02275675A JP H02275675 A JPH02275675 A JP H02275675A JP 1318471 A JP1318471 A JP 1318471A JP 31847189 A JP31847189 A JP 31847189A JP H02275675 A JPH02275675 A JP H02275675A
Authority
JP
Japan
Prior art keywords
layer
region
channel
film
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1318471A
Other languages
English (en)
Japanese (ja)
Inventor
Shinji Nishiura
西浦　真治
Takeyoshi Nishimura
武義 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP1318471A priority Critical patent/JPH02275675A/ja
Priority to DE3942640A priority patent/DE3942640C2/de
Priority to FR8917474A priority patent/FR2641417A1/fr
Publication of JPH02275675A publication Critical patent/JPH02275675A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP1318471A 1988-12-29 1989-12-07 Ｍｏｓ型半導体装置 Pending JPH02275675A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1318471A JPH02275675A (ja) 1988-12-29 1989-12-07 Ｍｏｓ型半導体装置
DE3942640A DE3942640C2 (de) 1988-12-29 1989-12-22 MOS-Halbleitervorrichtung
FR8917474A FR2641417A1 (fr) 1988-12-29 1989-12-29 Dispositif a semi-conducteur de type mos

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP33282688 1988-12-29
JP63-332826 1988-12-29
JP1318471A JPH02275675A (ja) 1988-12-29 1989-12-07 Ｍｏｓ型半導体装置

Publications (1)

Publication Number Publication Date
JPH02275675A true JPH02275675A (ja) 1990-11-09

Family

ID=26569380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1318471A Pending JPH02275675A (ja) 1988-12-29 1989-12-07 Ｍｏｓ型半導体装置

Country Status (3)

Country Link
JP (1) JPH02275675A (enExample)
DE (1) DE3942640C2 (enExample)
FR (1) FR2641417A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5621234A (en) * 1991-10-07 1997-04-15 Niipondenso Co., Ltd. Vertical semiconductor device with breakdown voltage improvement region
JP2001523894A (ja) * 1997-11-18 2001-11-27 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 半導体モジュール
JP2010539728A (ja) * 2007-09-18 2010-12-16 クリー・インコーポレーテッド 絶縁ゲートバイポーラ導電トランジスタ（ｉｂｃｔ）および関連する製作方法
CN119730331A (zh) * 2025-02-25 2025-03-28 山东大学 提升高频性能的碳化硅mosfet版图结构及制作方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2705173B1 (fr) * 1993-05-10 1995-07-28 Sgs Thomson Microelectronics Composant limiteur de courant serie.
EP0865085A1 (en) * 1997-03-11 1998-09-16 STMicroelectronics S.r.l. Insulated gate bipolar transistor with high dynamic ruggedness
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
CN101501859B (zh) 2006-08-17 2011-05-25 克里公司 高功率绝缘栅双极晶体管
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
JP2014531752A (ja) 2011-09-11 2014-11-27 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 改善したレイアウトを有するトランジスタを備える高電流密度電力モジュール

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164473A (ja) * 1986-12-26 1988-07-07 Fujitsu Ltd 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3103444A1 (de) * 1981-02-02 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand
JPS57206073A (en) * 1981-06-12 1982-12-17 Hitachi Ltd Mis semiconductor device
DE3224642A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit injektorzone
US4779123A (en) * 1985-12-13 1988-10-18 Siliconix Incorporated Insulated gate transistor array
EP0279403A3 (en) * 1987-02-16 1988-12-07 Nec Corporation Vertical mos field effect transistor having a high withstand voltage and a high switching speed

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164473A (ja) * 1986-12-26 1988-07-07 Fujitsu Ltd 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5621234A (en) * 1991-10-07 1997-04-15 Niipondenso Co., Ltd. Vertical semiconductor device with breakdown voltage improvement region
JP2001523894A (ja) * 1997-11-18 2001-11-27 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 半導体モジュール
JP2010539728A (ja) * 2007-09-18 2010-12-16 クリー・インコーポレーテッド 絶縁ゲートバイポーラ導電トランジスタ（ｉｂｃｔ）および関連する製作方法
CN119730331A (zh) * 2025-02-25 2025-03-28 山东大学 提升高频性能的碳化硅mosfet版图结构及制作方法

Also Published As

Publication number Publication date
DE3942640C2 (de) 1997-05-15
DE3942640A1 (de) 1990-08-02
FR2641417B1 (enExample) 1995-03-24
FR2641417A1 (fr) 1990-07-06

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