JPH0225260B2 - - Google Patents

Info

Publication number
JPH0225260B2
JPH0225260B2 JP57090611A JP9061182A JPH0225260B2 JP H0225260 B2 JPH0225260 B2 JP H0225260B2 JP 57090611 A JP57090611 A JP 57090611A JP 9061182 A JP9061182 A JP 9061182A JP H0225260 B2 JPH0225260 B2 JP H0225260B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
resistor
resistors
present
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57090611A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58207663A (ja
Inventor
Kazuo Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57090611A priority Critical patent/JPS58207663A/ja
Priority to US06/498,030 priority patent/US4620212A/en
Publication of JPS58207663A publication Critical patent/JPS58207663A/ja
Publication of JPH0225260B2 publication Critical patent/JPH0225260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP57090611A 1982-05-28 1982-05-28 半導体装置 Granted JPS58207663A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57090611A JPS58207663A (ja) 1982-05-28 1982-05-28 半導体装置
US06/498,030 US4620212A (en) 1982-05-28 1983-05-25 Semiconductor device with a resistor of polycrystalline silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57090611A JPS58207663A (ja) 1982-05-28 1982-05-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS58207663A JPS58207663A (ja) 1983-12-03
JPH0225260B2 true JPH0225260B2 (enrdf_load_stackoverflow) 1990-06-01

Family

ID=14003271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57090611A Granted JPS58207663A (ja) 1982-05-28 1982-05-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS58207663A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060760A (en) * 1997-08-13 2000-05-09 Tritech Microelectronics, Ltd. Optimal resistor network layout
US8354724B2 (en) 2007-03-26 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826666B2 (ja) * 1975-06-18 1983-06-04 松下電器産業株式会社 ハンドウタイソウチノセイゾウホウホウ

Also Published As

Publication number Publication date
JPS58207663A (ja) 1983-12-03

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