JPH022306B2 - - Google Patents
Info
- Publication number
- JPH022306B2 JPH022306B2 JP61196292A JP19629286A JPH022306B2 JP H022306 B2 JPH022306 B2 JP H022306B2 JP 61196292 A JP61196292 A JP 61196292A JP 19629286 A JP19629286 A JP 19629286A JP H022306 B2 JPH022306 B2 JP H022306B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- anode
- cathode
- nax
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005684 electric field Effects 0.000 claims description 38
- 230000000903 blocking effect Effects 0.000 claims description 33
- 239000012535 impurity Substances 0.000 claims description 23
- 230000006698 induction Effects 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 9
- 239000003990 capacitor Substances 0.000 claims 2
- 238000009826 distribution Methods 0.000 description 24
- 230000015556 catabolic process Effects 0.000 description 20
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 238000005036 potential barrier Methods 0.000 description 11
- 230000003068 static effect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19629286A JPS62247566A (ja) | 1986-08-21 | 1986-08-21 | 静電誘導サイリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19629286A JPS62247566A (ja) | 1986-08-21 | 1986-08-21 | 静電誘導サイリスタ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP836679A Division JPS5599774A (en) | 1979-01-26 | 1979-01-26 | Electrostatic induction type thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62247566A JPS62247566A (ja) | 1987-10-28 |
| JPH022306B2 true JPH022306B2 (fr) | 1990-01-17 |
Family
ID=16355375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19629286A Granted JPS62247566A (ja) | 1986-08-21 | 1986-08-21 | 静電誘導サイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62247566A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0374877A (ja) * | 1989-08-15 | 1991-03-29 | Matsushita Electric Works Ltd | 半導体装置 |
| JP2509127B2 (ja) * | 1992-03-04 | 1996-06-19 | 財団法人半導体研究振興会 | 静電誘導デバイス |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50120780A (fr) * | 1974-03-08 | 1975-09-22 | ||
| JPS52135277A (en) * | 1976-05-06 | 1977-11-12 | Mitsubishi Electric Corp | Electrostatic induction type thyristor |
| JPS54113273A (en) * | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Field effect-type switching element |
-
1986
- 1986-08-21 JP JP19629286A patent/JPS62247566A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50120780A (fr) * | 1974-03-08 | 1975-09-22 | ||
| JPS52135277A (en) * | 1976-05-06 | 1977-11-12 | Mitsubishi Electric Corp | Electrostatic induction type thyristor |
| JPS54113273A (en) * | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Field effect-type switching element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62247566A (ja) | 1987-10-28 |
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