JPH02218164A - Mis type field-effect transistor - Google Patents

Mis type field-effect transistor

Info

Publication number
JPH02218164A
JPH02218164A JP3864289A JP3864289A JPH02218164A JP H02218164 A JPH02218164 A JP H02218164A JP 3864289 A JP3864289 A JP 3864289A JP 3864289 A JP3864289 A JP 3864289A JP H02218164 A JPH02218164 A JP H02218164A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
silicon
gate
electrode
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3864289A
Inventor
Katsujirou Arai
Original Assignee
Matsushita Electron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To offset the stress of a silicide film and the stress of a silicon nitride film and to prevent the releasing phenomenon of a gate electrode by coating the upper surface of a polycide gate electrode with silicon nitride.
CONSTITUTION: A gate oxide film 5 is selectively formed on the surface of one conductivity type semiconductor substrate 1. A polycrystalline silicon film 6, a gate electrode comprising a tungsten silicide film 7 and silicon nitride film 8 are sequentially laminated on the film 5. A silicon oxide film 9 for the side wall is formed on the side surface of the gate electrode. The tension for the silicide film 7 in the tensile direction is increased when the content of the silicon in the film 7 is low and heat treatment is performed. Meanwhile, stress in the compressing direction acts on the silicon nitride film 8. The two formed films 7 and 8 are directly brought into contact, and the stresses in the reverse direction are eased. Thus, the releasing phenomenon after the formation of the gate electrode can be prevented.
COPYRIGHT: (C)1990,JPO&Japio
JP3864289A 1989-02-17 1989-02-17 Mis type field-effect transistor Pending JPH02218164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3864289A JPH02218164A (en) 1989-02-17 1989-02-17 Mis type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3864289A JPH02218164A (en) 1989-02-17 1989-02-17 Mis type field-effect transistor

Publications (1)

Publication Number Publication Date
JPH02218164A true true JPH02218164A (en) 1990-08-30

Family

ID=12530900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3864289A Pending JPH02218164A (en) 1989-02-17 1989-02-17 Mis type field-effect transistor

Country Status (1)

Country Link
JP (1) JPH02218164A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346483B1 (en) 1999-07-02 2002-02-12 Sharp Kabushiki Kaisha Film forming method and film formed by the method
US7452764B2 (en) * 2003-06-12 2008-11-18 Intel Corporation Gate-induced strain for MOS performance improvement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346483B1 (en) 1999-07-02 2002-02-12 Sharp Kabushiki Kaisha Film forming method and film formed by the method
US7452764B2 (en) * 2003-06-12 2008-11-18 Intel Corporation Gate-induced strain for MOS performance improvement

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