JPH0220140B2 - - Google Patents

Info

Publication number
JPH0220140B2
JPH0220140B2 JP58028097A JP2809783A JPH0220140B2 JP H0220140 B2 JPH0220140 B2 JP H0220140B2 JP 58028097 A JP58028097 A JP 58028097A JP 2809783 A JP2809783 A JP 2809783A JP H0220140 B2 JPH0220140 B2 JP H0220140B2
Authority
JP
Japan
Prior art keywords
layer
conductive layer
aluminum
base layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58028097A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59154040A (ja
Inventor
Katsuya Okumura
Masaaki Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58028097A priority Critical patent/JPS59154040A/ja
Priority to DE8484101759T priority patent/DE3463589D1/de
Priority to EP84101759A priority patent/EP0119497B1/en
Priority to US06/582,223 priority patent/US4538344A/en
Publication of JPS59154040A publication Critical patent/JPS59154040A/ja
Publication of JPH0220140B2 publication Critical patent/JPH0220140B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP58028097A 1983-02-22 1983-02-22 半導体装置の製造方法 Granted JPS59154040A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58028097A JPS59154040A (ja) 1983-02-22 1983-02-22 半導体装置の製造方法
DE8484101759T DE3463589D1 (en) 1983-02-22 1984-02-20 Method of forming electrode/wiring layer
EP84101759A EP0119497B1 (en) 1983-02-22 1984-02-20 Method of forming electrode/wiring layer
US06/582,223 US4538344A (en) 1983-02-22 1984-02-21 Method of forming electrode/wiring layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028097A JPS59154040A (ja) 1983-02-22 1983-02-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59154040A JPS59154040A (ja) 1984-09-03
JPH0220140B2 true JPH0220140B2 (en:Method) 1990-05-08

Family

ID=12239283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028097A Granted JPS59154040A (ja) 1983-02-22 1983-02-22 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4538344A (en:Method)
EP (1) EP0119497B1 (en:Method)
JP (1) JPS59154040A (en:Method)
DE (1) DE3463589D1 (en:Method)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3314879A1 (de) * 1983-04-25 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von stabilen, niederohmigen kontakten in integrierten halbleiterschaltungen
FR2563048B1 (fr) * 1984-04-13 1986-05-30 Efcis Procede de realisation de contacts d'aluminium a travers une couche isolante epaisse dans un circuit integre
FR2566181B1 (fr) * 1984-06-14 1986-08-22 Commissariat Energie Atomique Procede d'autopositionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
EP0199030A3 (de) * 1985-04-11 1987-08-26 Siemens Aktiengesellschaft Verfahren zum Herstellen einer Mehrlagenverdrahtung von integrierten Halbleiterschaltungen mit mindestens einer aus einer Aluminiumlegierung bestehenden Leitbahnebene mit Kontaktlochauffüllung
US4714686A (en) * 1985-07-31 1987-12-22 Advanced Micro Devices, Inc. Method of forming contact plugs for planarized integrated circuits
US4808552A (en) * 1985-09-11 1989-02-28 Texas Instruments Incorporated Process for making vertically-oriented interconnections for VLSI devices
JPS62102559A (ja) * 1985-10-29 1987-05-13 Mitsubishi Electric Corp 半導体装置及び製造方法
US4818723A (en) * 1985-11-27 1989-04-04 Advanced Micro Devices, Inc. Silicide contact plug formation technique
US4835118A (en) * 1986-09-08 1989-05-30 Inmos Corporation Non-destructive energy beam activated conductive links
EP0267831A1 (en) * 1986-10-17 1988-05-18 Thomson Components-Mostek Corporation Double level metal planarization technique
US4837051A (en) * 1986-12-19 1989-06-06 Hughes Aircraft Company Conductive plug for contacts and vias on integrated circuits
KR910006975B1 (ko) * 1986-12-19 1991-09-14 휴우즈 에어크라프트 캄파니 도전성 플러그로 집적 회로 상의 접점 및 비아를 충전하는 방법
US5238874A (en) * 1989-11-09 1993-08-24 Nec Corporation Fabrication method for laminated films comprising Al-Si-Co alloy film and refractory metal silioide copper film
JPH04226054A (ja) * 1990-03-02 1992-08-14 Toshiba Corp 多層配線構造を有する半導体装置及びその製造方法
DE69125210T2 (de) * 1990-05-31 1997-08-07 Canon Kk Verfahren zur Herstellung einer Halbleitervorrichtung mit einer Verdrahtungsstruktur hoher Dichte
JP2841976B2 (ja) * 1990-11-28 1998-12-24 日本電気株式会社 半導体装置およびその製造方法
US5293512A (en) * 1991-02-13 1994-03-08 Nec Corporation Semiconductor device having a groove type isolation region
TW520072U (en) * 1991-07-08 2003-02-01 Samsung Electronics Co Ltd A semiconductor device having a multi-layer metal contact
US5461005A (en) * 1991-12-27 1995-10-24 At&T Ipm Corp. Method of forming silicide in integrated circuit manufacture
US5637525A (en) * 1995-10-20 1997-06-10 Micron Technology, Inc. Method of forming a CMOS circuitry
US5994218A (en) * 1996-09-30 1999-11-30 Kabushiki Kaisha Toshiba Method of forming electrical connections for a semiconductor device
US6071810A (en) * 1996-12-24 2000-06-06 Kabushiki Kaisha Toshiba Method of filling contact holes and wiring grooves of a semiconductor device
US6103572A (en) * 1997-02-07 2000-08-15 Citizen Watch Co., Ltd. Method of fabricating a semiconductor nonvolatile storage device
US6303509B1 (en) * 1999-10-29 2001-10-16 Taiwan Semiconductor Manufacturing Company Method to calibrate the wafer transfer for oxide etcher (with clamp)
JP2004260101A (ja) 2003-02-27 2004-09-16 Rohm Co Ltd 半導体装置の製造方法
EP1909319A1 (en) * 2006-10-03 2008-04-09 STMicroelectronics (Crolles 2) SAS Low resistance interconnect

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5218670B2 (en:Method) * 1971-08-11 1977-05-23
US3906540A (en) * 1973-04-02 1975-09-16 Nat Semiconductor Corp Metal-silicide Schottky diode employing an aluminum connector
US3918149A (en) * 1974-06-28 1975-11-11 Intel Corp Al/Si metallization process
JPS5114798A (ja) * 1974-07-27 1976-02-05 Nippon Oils & Fats Co Ltd Kinkyuhinanyoratsukasan
US3996656A (en) * 1974-08-28 1976-12-14 Harris Corporation Normally off Schottky barrier field effect transistor and method of fabrication
JPS5317393A (en) * 1976-07-31 1978-02-17 Mitsubishi Heavy Ind Ltd Commodities delivery detector
JPS5374888A (en) * 1976-12-15 1978-07-03 Fujitsu Ltd Manufacture of semiconductor device
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
US4358891A (en) * 1979-06-22 1982-11-16 Burroughs Corporation Method of forming a metal semiconductor field effect transistor
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
JPS56134757A (en) * 1980-03-26 1981-10-21 Nec Corp Complementary type mos semiconductor device and its manufacture
US4322453A (en) * 1980-12-08 1982-03-30 International Business Machines Corporation Conductivity WSi2 (tungsten silicide) films by Pt preanneal layering
US4398335A (en) * 1980-12-09 1983-08-16 Fairchild Camera & Instrument Corporation Multilayer metal silicide interconnections for integrated circuits
US4361599A (en) * 1981-03-23 1982-11-30 National Semiconductor Corporation Method of forming plasma etched semiconductor contacts
JPS57192047A (en) * 1981-05-20 1982-11-26 Mitsubishi Electric Corp Wiring layer in semiconductor device and manufacture thereof
JPS5816337A (ja) * 1981-07-22 1983-01-31 Hitachi Ltd プラント情報伝送システム

Also Published As

Publication number Publication date
DE3463589D1 (en) 1987-06-11
US4538344A (en) 1985-09-03
EP0119497B1 (en) 1987-05-06
EP0119497A1 (en) 1984-09-26
JPS59154040A (ja) 1984-09-03

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