JPH0219622B2 - - Google Patents

Info

Publication number
JPH0219622B2
JPH0219622B2 JP58167299A JP16729983A JPH0219622B2 JP H0219622 B2 JPH0219622 B2 JP H0219622B2 JP 58167299 A JP58167299 A JP 58167299A JP 16729983 A JP16729983 A JP 16729983A JP H0219622 B2 JPH0219622 B2 JP H0219622B2
Authority
JP
Japan
Prior art keywords
gate electrode
film
electrode
source
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58167299A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6057980A (ja
Inventor
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58167299A priority Critical patent/JPS6057980A/ja
Publication of JPS6057980A publication Critical patent/JPS6057980A/ja
Publication of JPH0219622B2 publication Critical patent/JPH0219622B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58167299A 1983-09-09 1983-09-09 半導体装置の製造方法 Granted JPS6057980A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58167299A JPS6057980A (ja) 1983-09-09 1983-09-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58167299A JPS6057980A (ja) 1983-09-09 1983-09-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6057980A JPS6057980A (ja) 1985-04-03
JPH0219622B2 true JPH0219622B2 (OSRAM) 1990-05-02

Family

ID=15847174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58167299A Granted JPS6057980A (ja) 1983-09-09 1983-09-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6057980A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6257256A (ja) * 1985-09-06 1987-03-12 Fujitsu Ltd 電界効果型半導体装置の製造方法
JPH02309174A (ja) * 1989-05-24 1990-12-25 Fujitsu Ltd 極低温用冷却機

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248478A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same
JPS57103363A (en) * 1980-12-18 1982-06-26 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field effect transistor
JPS59195874A (ja) * 1983-04-20 1984-11-07 Nec Corp 電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
JPS6057980A (ja) 1985-04-03

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