JPH0219619B2 - - Google Patents

Info

Publication number
JPH0219619B2
JPH0219619B2 JP55151089A JP15108980A JPH0219619B2 JP H0219619 B2 JPH0219619 B2 JP H0219619B2 JP 55151089 A JP55151089 A JP 55151089A JP 15108980 A JP15108980 A JP 15108980A JP H0219619 B2 JPH0219619 B2 JP H0219619B2
Authority
JP
Japan
Prior art keywords
nitrogen
epitaxial film
temperature
single crystal
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55151089A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5775421A (en
Inventor
Shinichi Hasegawa
Hisanori Fujita
Mikitoshi Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP15108980A priority Critical patent/JPS5775421A/ja
Publication of JPS5775421A publication Critical patent/JPS5775421A/ja
Publication of JPH0219619B2 publication Critical patent/JPH0219619B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials

Landscapes

  • Led Devices (AREA)
JP15108980A 1980-10-28 1980-10-28 Method of vapor growth compound semiconductor epitaxial film Granted JPS5775421A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15108980A JPS5775421A (en) 1980-10-28 1980-10-28 Method of vapor growth compound semiconductor epitaxial film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15108980A JPS5775421A (en) 1980-10-28 1980-10-28 Method of vapor growth compound semiconductor epitaxial film

Publications (2)

Publication Number Publication Date
JPS5775421A JPS5775421A (en) 1982-05-12
JPH0219619B2 true JPH0219619B2 (enrdf_load_stackoverflow) 1990-05-02

Family

ID=15511081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15108980A Granted JPS5775421A (en) 1980-10-28 1980-10-28 Method of vapor growth compound semiconductor epitaxial film

Country Status (1)

Country Link
JP (1) JPS5775421A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5623958B2 (enrdf_load_stackoverflow) * 1973-11-10 1981-06-03

Also Published As

Publication number Publication date
JPS5775421A (en) 1982-05-12

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