JPS5775421A - Method of vapor growth compound semiconductor epitaxial film - Google Patents

Method of vapor growth compound semiconductor epitaxial film

Info

Publication number
JPS5775421A
JPS5775421A JP15108980A JP15108980A JPS5775421A JP S5775421 A JPS5775421 A JP S5775421A JP 15108980 A JP15108980 A JP 15108980A JP 15108980 A JP15108980 A JP 15108980A JP S5775421 A JPS5775421 A JP S5775421A
Authority
JP
Japan
Prior art keywords
epitaxial film
junction
face
vapor phase
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15108980A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0219619B2 (enrdf_load_stackoverflow
Inventor
Shinichi Hasegawa
Hisanori Fujita
Mikitoshi Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP15108980A priority Critical patent/JPS5775421A/ja
Publication of JPS5775421A publication Critical patent/JPS5775421A/ja
Publication of JPH0219619B2 publication Critical patent/JPH0219619B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials

Landscapes

  • Led Devices (AREA)
JP15108980A 1980-10-28 1980-10-28 Method of vapor growth compound semiconductor epitaxial film Granted JPS5775421A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15108980A JPS5775421A (en) 1980-10-28 1980-10-28 Method of vapor growth compound semiconductor epitaxial film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15108980A JPS5775421A (en) 1980-10-28 1980-10-28 Method of vapor growth compound semiconductor epitaxial film

Publications (2)

Publication Number Publication Date
JPS5775421A true JPS5775421A (en) 1982-05-12
JPH0219619B2 JPH0219619B2 (enrdf_load_stackoverflow) 1990-05-02

Family

ID=15511081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15108980A Granted JPS5775421A (en) 1980-10-28 1980-10-28 Method of vapor growth compound semiconductor epitaxial film

Country Status (1)

Country Link
JP (1) JPS5775421A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5079258A (enrdf_load_stackoverflow) * 1973-11-10 1975-06-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5079258A (enrdf_load_stackoverflow) * 1973-11-10 1975-06-27

Also Published As

Publication number Publication date
JPH0219619B2 (enrdf_load_stackoverflow) 1990-05-02

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