JPH0217875B2 - - Google Patents
Info
- Publication number
- JPH0217875B2 JPH0217875B2 JP25066584A JP25066584A JPH0217875B2 JP H0217875 B2 JPH0217875 B2 JP H0217875B2 JP 25066584 A JP25066584 A JP 25066584A JP 25066584 A JP25066584 A JP 25066584A JP H0217875 B2 JPH0217875 B2 JP H0217875B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- node
- fet device
- channel fet
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 210000004027 cell Anatomy 0.000 description 28
- 238000003860 storage Methods 0.000 description 22
- 238000001465 metallisation Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 210000000352 storage cell Anatomy 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
Landscapes
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/584,033 US4584669A (en) | 1984-02-27 | 1984-02-27 | Memory cell with latent image capabilities |
| US584033 | 1996-01-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60182596A JPS60182596A (ja) | 1985-09-18 |
| JPH0217875B2 true JPH0217875B2 (enEXAMPLES) | 1990-04-23 |
Family
ID=24335628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59250665A Granted JPS60182596A (ja) | 1984-02-27 | 1984-11-29 | 半導体記憶回路 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4584669A (enEXAMPLES) |
| EP (1) | EP0156135A3 (enEXAMPLES) |
| JP (1) | JPS60182596A (enEXAMPLES) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4855803A (en) * | 1985-09-02 | 1989-08-08 | Ricoh Company, Ltd. | Selectively definable semiconductor device |
| JP2588936B2 (ja) * | 1988-07-04 | 1997-03-12 | 沖電気工業株式会社 | 半導体記憶装置 |
| US4995004A (en) * | 1989-05-15 | 1991-02-19 | Dallas Semiconductor Corporation | RAM/ROM hybrid memory architecture |
| US5517634A (en) * | 1992-06-23 | 1996-05-14 | Quantum Corporation | Disk drive system including a DRAM array and associated method for programming initial information into the array |
| US5455788A (en) * | 1993-08-24 | 1995-10-03 | Honeywell Inc. | SRAM to ROM programming connections to avoid parasitic devices and electrical overstress sensitivity |
| US5426614A (en) * | 1994-01-13 | 1995-06-20 | Texas Instruments Incorporated | Memory cell with programmable antifuse technology |
| US5986962A (en) * | 1998-07-23 | 1999-11-16 | International Business Machines Corporation | Internal shadow latch |
| US6122216A (en) * | 1998-12-09 | 2000-09-19 | Compaq Computer Corporation | Single package dual memory device |
| JP4712679B2 (ja) * | 2006-11-24 | 2011-06-29 | 三菱電機株式会社 | ヒートポンプ装置 |
| WO2013084114A1 (en) * | 2011-12-06 | 2013-06-13 | Koninklijke Philips Electronics N.V. | Balancing of a rotating anode |
| US9202554B2 (en) | 2014-03-13 | 2015-12-01 | International Business Machines Corporation | Methods and circuits for generating physically unclonable function |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3493786A (en) * | 1967-05-02 | 1970-02-03 | Rca Corp | Unbalanced memory cell |
| US3634929A (en) * | 1968-11-02 | 1972-01-18 | Tokyo Shibaura Electric Co | Method of manufacturing semiconductor integrated circuits |
| US3662351A (en) * | 1970-03-30 | 1972-05-09 | Ibm | Alterable-latent image monolithic memory |
| DE2165729C3 (de) * | 1971-12-30 | 1975-02-13 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithische, als Lese/Schreiboder als Festwertspeicher betreibbare Speicheranordnung |
| US3764825A (en) * | 1972-01-10 | 1973-10-09 | R Stewart | Active element memory |
| US3755793A (en) * | 1972-04-13 | 1973-08-28 | Ibm | Latent image memory with single-device cells of two types |
| US3820086A (en) * | 1972-05-01 | 1974-06-25 | Ibm | Read only memory(rom)superimposed on read/write memory(ram) |
| US4175290A (en) * | 1977-07-28 | 1979-11-20 | Hughes Aircraft Company | Integrated semiconductor memory array having improved logic latch circuitry |
| US4149268A (en) * | 1977-08-09 | 1979-04-10 | Harris Corporation | Dual function memory |
| US4278897A (en) * | 1978-12-28 | 1981-07-14 | Fujitsu Limited | Large scale semiconductor integrated circuit device |
| US4418401A (en) * | 1982-12-29 | 1983-11-29 | Ibm Corporation | Latent image ram cell |
-
1984
- 1984-02-27 US US06/584,033 patent/US4584669A/en not_active Expired - Fee Related
- 1984-11-29 JP JP59250665A patent/JPS60182596A/ja active Granted
-
1985
- 1985-02-08 EP EP85101323A patent/EP0156135A3/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US4584669A (en) | 1986-04-22 |
| EP0156135A3 (en) | 1987-09-23 |
| EP0156135A2 (en) | 1985-10-02 |
| JPS60182596A (ja) | 1985-09-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4472792A (en) | Semiconductor memory | |
| US6909635B2 (en) | Programmable memory cell using charge trapping in a gate oxide | |
| US5623438A (en) | Virtual ground read only memory circuit | |
| US4493056A (en) | RAM Utilizing offset contact regions for increased storage capacitance | |
| JP4072127B2 (ja) | 半導体集積回路 | |
| JPS638558B2 (enEXAMPLES) | ||
| JPH0217875B2 (enEXAMPLES) | ||
| CN100536023C (zh) | 半密度嵌入rom的dram | |
| EP0213638B1 (en) | Programmable semiconductor read only memory device | |
| JPS5938675B2 (ja) | シエア−ドコンタクトｅｐｒｏｍ用プログラムデコ−ダ | |
| JP2001067893A (ja) | 電気フューズ素子を備えた半導体集積回路装置 | |
| JPH10163346A (ja) | 半導体メモリのパワーライン配線構造 | |
| JP2001167592A (ja) | 不揮発性半導体記憶装置 | |
| JP2002093195A (ja) | 半導体記憶装置および半導体記憶装置のテスト方法 | |
| JPS596516B2 (ja) | 半導体記憶装置 | |
| JPS60226095A (ja) | 半導体記憶装置 | |
| US6903437B1 (en) | Semiconductor devices, capacitor antifuses, dynamic random access memories, and cell plate bias connection methods | |
| JPH06334138A (ja) | 半導体記憶装置 | |
| US6583459B1 (en) | Random access memory cell and method for fabricating same | |
| JPS5949706B2 (ja) | 半導体メモリ装置 | |
| JPH09232450A (ja) | 半導体装置 | |
| US5119332A (en) | Semiconductor memory | |
| JP3745875B2 (ja) | 半導体メモリ装置のバーンインストレス制御回路 | |
| JP2991399B2 (ja) | ゲートアレイ半導体装置 | |
| JPS6249670A (ja) | 半導体不揮発性記憶装置 |