JPH0216019B2 - - Google Patents
Info
- Publication number
- JPH0216019B2 JPH0216019B2 JP12426480A JP12426480A JPH0216019B2 JP H0216019 B2 JPH0216019 B2 JP H0216019B2 JP 12426480 A JP12426480 A JP 12426480A JP 12426480 A JP12426480 A JP 12426480A JP H0216019 B2 JPH0216019 B2 JP H0216019B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- polysilicon
- substrate
- film
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 description 32
- 239000010410 layer Substances 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
- H01L23/4855—Overhang structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12426480A JPS5748270A (en) | 1980-09-08 | 1980-09-08 | Semiconductor device |
NL8103565A NL188606C (nl) | 1980-09-08 | 1981-07-28 | Werkwijze voor het vervaardigen van een veldeffecttransistor met geisoleerde poort. |
GB8123805A GB2083698B (en) | 1980-09-08 | 1981-08-04 | Semiconductor device |
DE19813135103 DE3135103A1 (de) | 1980-09-08 | 1981-09-04 | Halbleiterbauelement |
FR8116853A FR2490011B1 (fr) | 1980-09-08 | 1981-09-04 | Dispositif semi-conducteur |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12426480A JPS5748270A (en) | 1980-09-08 | 1980-09-08 | Semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29598286A Division JPS62142335A (ja) | 1986-12-12 | 1986-12-12 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5748270A JPS5748270A (en) | 1982-03-19 |
JPH0216019B2 true JPH0216019B2 (US07816562-20101019-C00012.png) | 1990-04-13 |
Family
ID=14881022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12426480A Granted JPS5748270A (en) | 1980-09-08 | 1980-09-08 | Semiconductor device |
Country Status (5)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04194693A (ja) * | 1990-11-28 | 1992-07-14 | Mitsui Eng & Shipbuild Co Ltd | 道路空洞探査レーダシステム |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583380B2 (ja) * | 1977-03-04 | 1983-01-21 | 株式会社日立製作所 | 半導体装置とその製造方法 |
-
1980
- 1980-09-08 JP JP12426480A patent/JPS5748270A/ja active Granted
-
1981
- 1981-07-28 NL NL8103565A patent/NL188606C/xx not_active IP Right Cessation
- 1981-08-04 GB GB8123805A patent/GB2083698B/en not_active Expired
- 1981-09-04 FR FR8116853A patent/FR2490011B1/fr not_active Expired
- 1981-09-04 DE DE19813135103 patent/DE3135103A1/de active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04194693A (ja) * | 1990-11-28 | 1992-07-14 | Mitsui Eng & Shipbuild Co Ltd | 道路空洞探査レーダシステム |
Also Published As
Publication number | Publication date |
---|---|
NL8103565A (nl) | 1982-04-01 |
GB2083698B (en) | 1984-10-31 |
GB2083698A (en) | 1982-03-24 |
DE3135103C2 (US07816562-20101019-C00012.png) | 1988-07-14 |
NL188606C (nl) | 1992-08-03 |
NL188606B (nl) | 1992-03-02 |
JPS5748270A (en) | 1982-03-19 |
FR2490011B1 (fr) | 1985-09-27 |
DE3135103A1 (de) | 1982-05-06 |
FR2490011A1 (fr) | 1982-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100242861B1 (ko) | 반도체장치의 제조방법 | |
JPH0216019B2 (US07816562-20101019-C00012.png) | ||
JPH03109739A (ja) | 薄膜半導体装置の製法 | |
JPS60258964A (ja) | 半導体装置の製造方法 | |
JPS62224077A (ja) | 半導体集積回路装置 | |
JPH03116968A (ja) | 半導体装置の製造方法 | |
JPH05226466A (ja) | 半導体装置の製造方法 | |
JP2822795B2 (ja) | 半導体装置の製造方法 | |
KR100219416B1 (ko) | 반도체장치 제조방법 | |
JPS6068656A (ja) | 半導体装置の製造方法 | |
JPH0230124A (ja) | 半導体装置の製造方法 | |
JPS5943832B2 (ja) | 半導体装置の製造方法 | |
KR950013791B1 (ko) | 매립 형태의 콘택 위에 게이트전극 형성방법 | |
JPS61251165A (ja) | Bi−MIS集積回路の製造方法 | |
JPH0420266B2 (US07816562-20101019-C00012.png) | ||
JPS5885529A (ja) | 半導体装置の製造方法 | |
JPH08316475A (ja) | 半導体装置およびその製造方法 | |
JPH04144231A (ja) | 半導体装置の製造方法 | |
JPH10303418A (ja) | 半導体装置の製造方法 | |
JPS63170922A (ja) | 配線方法 | |
JPH1126756A (ja) | 半導体装置の製造方法 | |
JPH09129876A (ja) | 半導体装置の製造方法 | |
JPS62206873A (ja) | 半導体装置の製造方法 | |
JPS62142335A (ja) | 半導体装置の製造方法 | |
JPS63122272A (ja) | Mos型電界効果トランジスタ及びその製造方法 |