JPH0215631B2 - - Google Patents
Info
- Publication number
- JPH0215631B2 JPH0215631B2 JP56030208A JP3020881A JPH0215631B2 JP H0215631 B2 JPH0215631 B2 JP H0215631B2 JP 56030208 A JP56030208 A JP 56030208A JP 3020881 A JP3020881 A JP 3020881A JP H0215631 B2 JPH0215631 B2 JP H0215631B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- target body
- sputtering
- cooling member
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 238000001816 cooling Methods 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 23
- 229910021332 silicide Inorganic materials 0.000 claims description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 15
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3020881A JPS57145981A (en) | 1981-03-03 | 1981-03-03 | Target for sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3020881A JPS57145981A (en) | 1981-03-03 | 1981-03-03 | Target for sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57145981A JPS57145981A (en) | 1982-09-09 |
| JPH0215631B2 true JPH0215631B2 (de) | 1990-04-12 |
Family
ID=12297309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3020881A Granted JPS57145981A (en) | 1981-03-03 | 1981-03-03 | Target for sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57145981A (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59133369A (ja) * | 1983-01-21 | 1984-07-31 | Hitachi Ltd | スパツタリング用のタ−ゲツト構造体 |
| JPS59179784A (ja) * | 1983-03-31 | 1984-10-12 | Fujitsu Ltd | スパツタ装置 |
| JPS60102249U (ja) * | 1983-12-19 | 1985-07-12 | 日本真空技術株式会社 | スパツタリング用タ−ゲツト装置 |
| DE3787390T2 (de) * | 1986-04-04 | 1994-06-16 | Materials Research Corp | Kathoden- und Target-Anordnung für eine Beschichtungsvorrichtung zum Zerstäuben. |
| JP2635362B2 (ja) * | 1988-04-15 | 1997-07-30 | シャープ株式会社 | ターゲットユニット |
| JPH0586465A (ja) * | 1991-06-28 | 1993-04-06 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
| JPH06108240A (ja) * | 1992-09-30 | 1994-04-19 | Shibaura Eng Works Co Ltd | スパッタリング源 |
| DE19958857B4 (de) * | 1999-06-16 | 2014-09-25 | Applied Materials Gmbh & Co. Kg | Sputterkathode |
| JP6508774B2 (ja) * | 2015-06-09 | 2019-05-08 | 株式会社高純度化学研究所 | スパッタリングターゲット組立体 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940682U (de) * | 1972-07-13 | 1974-04-10 | ||
| JPS5488885A (en) * | 1977-12-26 | 1979-07-14 | Matsushita Electric Ind Co Ltd | Insulator target for sputtering device |
| JPS5597473A (en) * | 1979-01-18 | 1980-07-24 | Murata Mfg Co Ltd | Target for sputtering |
| JPS5597472A (en) * | 1979-01-16 | 1980-07-24 | Murata Mfg Co Ltd | Target for sputtering |
| JPS5537879B2 (de) * | 1973-10-15 | 1980-09-30 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58697Y2 (ja) * | 1978-09-04 | 1983-01-07 | 松下電器産業株式会社 | スパッタ用タ−ゲット |
-
1981
- 1981-03-03 JP JP3020881A patent/JPS57145981A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940682U (de) * | 1972-07-13 | 1974-04-10 | ||
| JPS5537879B2 (de) * | 1973-10-15 | 1980-09-30 | ||
| JPS5488885A (en) * | 1977-12-26 | 1979-07-14 | Matsushita Electric Ind Co Ltd | Insulator target for sputtering device |
| JPS5597472A (en) * | 1979-01-16 | 1980-07-24 | Murata Mfg Co Ltd | Target for sputtering |
| JPS5597473A (en) * | 1979-01-18 | 1980-07-24 | Murata Mfg Co Ltd | Target for sputtering |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57145981A (en) | 1982-09-09 |
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