JPS5488885A - Insulator target for sputtering device - Google Patents
Insulator target for sputtering deviceInfo
- Publication number
- JPS5488885A JPS5488885A JP16075877A JP16075877A JPS5488885A JP S5488885 A JPS5488885 A JP S5488885A JP 16075877 A JP16075877 A JP 16075877A JP 16075877 A JP16075877 A JP 16075877A JP S5488885 A JPS5488885 A JP S5488885A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- solder
- fitting
- layer
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To preven cracking of the title target and increase sputtering efficiency by metallizing one side of an insulator target body; forming a solder layer on the metallized layer; and bonding the body to a fitting metal plate covered with a solder layer by melting both the solder layers. CONSTITUTION:One side of insulator target body 7 is metallized 8, and the metallized layer is plated with solder 9. The part of fitting metal plate 10 which part is to be bonded to body 7 is coated with solder to form solder layer 11. Fitting holes 10a are made in plate 10 to screw plate 10 to a fitting stand. Body 7 is then fixed into recess 10b of plate 10 and heated, whereby solder layers 9, 11 are melted to form solder layer 12 and the whole surface of body 7 is bonded to plate 10. The resulting target is screwed to a fitting stand, and the side of plate 10 is directly cooled with water. Thus, body 7 is efficiently cooled, preventing cracking even if high sputtering power is supplied.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16075877A JPS5488885A (en) | 1977-12-26 | 1977-12-26 | Insulator target for sputtering device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16075877A JPS5488885A (en) | 1977-12-26 | 1977-12-26 | Insulator target for sputtering device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5488885A true JPS5488885A (en) | 1979-07-14 |
Family
ID=15721820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16075877A Pending JPS5488885A (en) | 1977-12-26 | 1977-12-26 | Insulator target for sputtering device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5488885A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57145981A (en) * | 1981-03-03 | 1982-09-09 | Toshiba Corp | Target for sputtering device |
JPS57188680A (en) * | 1981-05-16 | 1982-11-19 | Kemisuton:Kk | Target for sputtering and production thereof |
JPS5923870A (en) * | 1982-07-09 | 1984-02-07 | バリアン・アソシエイツ・インコ−ポレイテツド | Target assembly of specific material for sputter coating device |
JPS5921661U (en) * | 1982-07-28 | 1984-02-09 | 日本真空技術株式会社 | sputtering cathode |
JPS5956971A (en) * | 1982-09-27 | 1984-04-02 | Tanaka Kikinzoku Kogyo Kk | Production of target for sputtering |
JPS6277461A (en) * | 1985-09-30 | 1987-04-09 | Shinku Kikai Kogyo Kk | Backing plate for high frequency sputtering electrode |
JPS62222060A (en) * | 1986-03-20 | 1987-09-30 | Hitachi Metals Ltd | Target for sputtering |
-
1977
- 1977-12-26 JP JP16075877A patent/JPS5488885A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57145981A (en) * | 1981-03-03 | 1982-09-09 | Toshiba Corp | Target for sputtering device |
JPH0215631B2 (en) * | 1981-03-03 | 1990-04-12 | Tokyo Shibaura Electric Co | |
JPS57188680A (en) * | 1981-05-16 | 1982-11-19 | Kemisuton:Kk | Target for sputtering and production thereof |
JPS5923870A (en) * | 1982-07-09 | 1984-02-07 | バリアン・アソシエイツ・インコ−ポレイテツド | Target assembly of specific material for sputter coating device |
JPH0251981B2 (en) * | 1982-07-09 | 1990-11-09 | Varian Associates | |
JPS5921661U (en) * | 1982-07-28 | 1984-02-09 | 日本真空技術株式会社 | sputtering cathode |
JPS623387Y2 (en) * | 1982-07-28 | 1987-01-26 | ||
JPS5956971A (en) * | 1982-09-27 | 1984-04-02 | Tanaka Kikinzoku Kogyo Kk | Production of target for sputtering |
JPH0140711B2 (en) * | 1982-09-27 | 1989-08-30 | Tanaka Precious Metal Ind | |
JPS6277461A (en) * | 1985-09-30 | 1987-04-09 | Shinku Kikai Kogyo Kk | Backing plate for high frequency sputtering electrode |
JPS62222060A (en) * | 1986-03-20 | 1987-09-30 | Hitachi Metals Ltd | Target for sputtering |
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