JPS6447864A - Method for joining sputtering target - Google Patents

Method for joining sputtering target

Info

Publication number
JPS6447864A
JPS6447864A JP20368187A JP20368187A JPS6447864A JP S6447864 A JPS6447864 A JP S6447864A JP 20368187 A JP20368187 A JP 20368187A JP 20368187 A JP20368187 A JP 20368187A JP S6447864 A JPS6447864 A JP S6447864A
Authority
JP
Japan
Prior art keywords
sputtering target
surface treatment
joining
soldered
cracking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20368187A
Other languages
Japanese (ja)
Inventor
Toshihiko Yamagishi
Chikao Yazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20368187A priority Critical patent/JPS6447864A/en
Publication of JPS6447864A publication Critical patent/JPS6447864A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Abstract

PURPOSE:To obtain a sputtering target without cracking and releasing by applying linear surface treatment with poor wettability to the respective soldering surfaces of a sputtering target and a backing plate, and ten carrying out soldering. CONSTITUTION:When the sputtering target and the backing plate are soldered, liner surface treatment with poor wettability are applied to the respective soldering surfaces. The lines of the surface treatment on both surfaces are preferably aligned with each other when the joining surfaces are matched. The lines are preferably connected to the side of the sputtering target. By this constitution, a linear space not soldered is formed and used as a gas vent connected to the side, and the flow of the solder is controlled. As a result, the generation of voids is prevented, and a sputtering target without cracking and releasing and having good thermal conductivity is obtained.
JP20368187A 1987-08-17 1987-08-17 Method for joining sputtering target Pending JPS6447864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20368187A JPS6447864A (en) 1987-08-17 1987-08-17 Method for joining sputtering target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20368187A JPS6447864A (en) 1987-08-17 1987-08-17 Method for joining sputtering target

Publications (1)

Publication Number Publication Date
JPS6447864A true JPS6447864A (en) 1989-02-22

Family

ID=16478080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20368187A Pending JPS6447864A (en) 1987-08-17 1987-08-17 Method for joining sputtering target

Country Status (1)

Country Link
JP (1) JPS6447864A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03111564A (en) * 1989-06-15 1991-05-13 Hitachi Metals Ltd Target assembly for vapor deposition and its production
US6774339B1 (en) * 1999-11-09 2004-08-10 Tosoh Smd, Inc. Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin
WO2011144759A1 (en) * 2010-05-21 2011-11-24 Umicore Non-continuous bonding of sputtering target to backing material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188680A (en) * 1981-05-16 1982-11-19 Kemisuton:Kk Target for sputtering and production thereof
JPS5956788A (en) * 1982-09-27 1984-04-02 株式会社日立製作所 Electric circuit part

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188680A (en) * 1981-05-16 1982-11-19 Kemisuton:Kk Target for sputtering and production thereof
JPS5956788A (en) * 1982-09-27 1984-04-02 株式会社日立製作所 Electric circuit part

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03111564A (en) * 1989-06-15 1991-05-13 Hitachi Metals Ltd Target assembly for vapor deposition and its production
US6774339B1 (en) * 1999-11-09 2004-08-10 Tosoh Smd, Inc. Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin
WO2011144759A1 (en) * 2010-05-21 2011-11-24 Umicore Non-continuous bonding of sputtering target to backing material
CN102906300A (en) * 2010-05-21 2013-01-30 优美科公司 Non-continuous bonding of sputtering target to backing material
JP2013529253A (en) * 2010-05-21 2013-07-18 ユミコア エセ．アー． Non-continuous bonding of sputtering target to backing material
US9932667B2 (en) 2010-05-21 2018-04-03 Vital Thin Film Materials (Guangdong) Co., Ltd. Non-continuous bonding of sputtering target to backing material

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