JPS5597473A - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPS5597473A JPS5597473A JP509979A JP509979A JPS5597473A JP S5597473 A JPS5597473 A JP S5597473A JP 509979 A JP509979 A JP 509979A JP 509979 A JP509979 A JP 509979A JP S5597473 A JPS5597473 A JP S5597473A
- Authority
- JP
- Japan
- Prior art keywords
- target
- low
- cathode body
- melting
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To prevent the thermal fracture of target due to the rise of film-forming speed, etc., by interposing a low-melting Pb-Sn alloy layer between cathode and target. CONSTITUTION:A low-melting Pb-Sn alloy containing one or more of Zn, Sb, Al, Ti, Si, Cu, and Cd is rubbed on the surface of the cathode body 11, and also the low-melting alloy is rubbed on the surface of the target 17 of ceramic, glass, synthetic resin, etc. Then, the low-melting alloy layers 18 on the cathode body 11 side and the target 17 side are adhered to each other by heating and compression and then solidified by cooling to fix the target 17 to the cathode body 11. Thus, the thermal conductivity of the cathode body 11 and the target 17 is raised and the difference in thermal expansion between both is absorbed by the low-melting alloy layer 18, the thermal fracture of the target can be prevented even in case where high-frequency power is applied to the cathode body 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP509979A JPS5597473A (en) | 1979-01-18 | 1979-01-18 | Target for sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP509979A JPS5597473A (en) | 1979-01-18 | 1979-01-18 | Target for sputtering |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5597473A true JPS5597473A (en) | 1980-07-24 |
JPS6358912B2 JPS6358912B2 (en) | 1988-11-17 |
Family
ID=11601923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP509979A Granted JPS5597473A (en) | 1979-01-18 | 1979-01-18 | Target for sputtering |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5597473A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57145981A (en) * | 1981-03-03 | 1982-09-09 | Toshiba Corp | Target for sputtering device |
JPS63121662A (en) * | 1987-10-14 | 1988-05-25 | Hitachi Metals Ltd | Target for sputtering |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0341615U (en) * | 1989-08-30 | 1991-04-19 |
-
1979
- 1979-01-18 JP JP509979A patent/JPS5597473A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57145981A (en) * | 1981-03-03 | 1982-09-09 | Toshiba Corp | Target for sputtering device |
JPH0215631B2 (en) * | 1981-03-03 | 1990-04-12 | Tokyo Shibaura Electric Co | |
JPS63121662A (en) * | 1987-10-14 | 1988-05-25 | Hitachi Metals Ltd | Target for sputtering |
Also Published As
Publication number | Publication date |
---|---|
JPS6358912B2 (en) | 1988-11-17 |
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