JPH0214317B2 - - Google Patents

Info

Publication number
JPH0214317B2
JPH0214317B2 JP57145047A JP14504782A JPH0214317B2 JP H0214317 B2 JPH0214317 B2 JP H0214317B2 JP 57145047 A JP57145047 A JP 57145047A JP 14504782 A JP14504782 A JP 14504782A JP H0214317 B2 JPH0214317 B2 JP H0214317B2
Authority
JP
Japan
Prior art keywords
temperature
layer
type
semiconductor crystal
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57145047A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5935091A (ja
Inventor
Toshiharu Kawabata
Susumu Furuike
Toshio Matsuda
Hitoo Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14504782A priority Critical patent/JPS5935091A/ja
Publication of JPS5935091A publication Critical patent/JPS5935091A/ja
Publication of JPH0214317B2 publication Critical patent/JPH0214317B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP14504782A 1982-08-20 1982-08-20 液相エピタキシヤル成長方法 Granted JPS5935091A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14504782A JPS5935091A (ja) 1982-08-20 1982-08-20 液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14504782A JPS5935091A (ja) 1982-08-20 1982-08-20 液相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS5935091A JPS5935091A (ja) 1984-02-25
JPH0214317B2 true JPH0214317B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-04-06

Family

ID=15376152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14504782A Granted JPS5935091A (ja) 1982-08-20 1982-08-20 液相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS5935091A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133529A (en) * 1981-02-13 1982-08-18 Nippon Telegr & Teleph Corp <Ntt> Optical head
JPH0821174B2 (ja) * 1986-09-09 1996-03-04 キヤノン電子株式会社 光ヘツド装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133480A (en) * 1978-04-07 1979-10-17 Toshiba Corp Growth method for liquid phase epitaxial
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase

Also Published As

Publication number Publication date
JPS5935091A (ja) 1984-02-25

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