JPH0160546B2 - - Google Patents
Info
- Publication number
- JPH0160546B2 JPH0160546B2 JP1850581A JP1850581A JPH0160546B2 JP H0160546 B2 JPH0160546 B2 JP H0160546B2 JP 1850581 A JP1850581 A JP 1850581A JP 1850581 A JP1850581 A JP 1850581A JP H0160546 B2 JPH0160546 B2 JP H0160546B2
- Authority
- JP
- Japan
- Prior art keywords
- evaporation
- vapor flow
- thin film
- evaporation source
- partition wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001704 evaporation Methods 0.000 claims description 72
- 230000008020 evaporation Effects 0.000 claims description 68
- 238000005192 partition Methods 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 11
- 230000002265 prevention Effects 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 239000000314 lubricant Substances 0.000 claims description 3
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims 2
- 239000000463 material Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910018657 Mn—Al Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1850581A JPS57134555A (en) | 1981-02-10 | 1981-02-10 | Method and device for forming thin film |
| DE19823204337 DE3204337A1 (de) | 1981-02-10 | 1982-02-09 | Verfahren und vorrichtung zum bilden eines duennen films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1850581A JPS57134555A (en) | 1981-02-10 | 1981-02-10 | Method and device for forming thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57134555A JPS57134555A (en) | 1982-08-19 |
| JPH0160546B2 true JPH0160546B2 (enrdf_load_stackoverflow) | 1989-12-22 |
Family
ID=11973474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1850581A Granted JPS57134555A (en) | 1981-02-10 | 1981-02-10 | Method and device for forming thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57134555A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003035925A1 (en) * | 2001-10-26 | 2003-05-01 | Matsushita Electric Works, Ltd. | Device and method for vacuum deposition, and organic electroluminescent element provided by the device and the method |
| JP2004047452A (ja) * | 2002-05-17 | 2004-02-12 | Semiconductor Energy Lab Co Ltd | 製造装置 |
| JP2013067867A (ja) * | 2012-12-13 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | 容器 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3590269T (de) * | 1984-06-12 | 1986-06-05 | Kievskij politechničeskij institut imeni 50-letija Velikoj Oktjabrskoj Socialističeskoj Revoljucii, Kiev | Verfahren zum Aufbringen von dünnen Schichten durch Vakuumaufdampfen |
| JPS6143275U (ja) * | 1984-08-17 | 1986-03-20 | 三洋電機株式会社 | 結晶成長装置 |
| JPS62124271A (ja) * | 1985-11-25 | 1987-06-05 | Mitsubishi Electric Corp | 溶融物質の蒸気噴出装置 |
| JPS6389660A (ja) * | 1986-10-01 | 1988-04-20 | Konica Corp | 蛍光体蒸着装置 |
| JP2701477B2 (ja) * | 1989-09-19 | 1998-01-21 | 株式会社ユアサコーポレーション | 二酸化マンガン正極の製造法 |
| JP2701476B2 (ja) * | 1989-09-19 | 1998-01-21 | 株式会社ユアサコーポレーション | リチウム負極の製造法 |
| JP2008204835A (ja) * | 2007-02-21 | 2008-09-04 | Matsushita Electric Ind Co Ltd | 電気化学素子とその電極の前処理方法および製造方法、前処理装置 |
| JP5620747B2 (ja) * | 2010-08-19 | 2014-11-05 | 三菱伸銅株式会社 | 真空蒸着装置 |
| CN112981443B (zh) * | 2021-02-22 | 2022-04-19 | 吉林大学 | 一种表面沉积纳米银薄膜的泡沫镍、制备方法及其应用 |
| WO2024022579A1 (en) * | 2022-07-26 | 2024-02-01 | Applied Materials, Inc. | Evaporation source, material deposition apparatus, and method of depositing material on a substrate |
-
1981
- 1981-02-10 JP JP1850581A patent/JPS57134555A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003035925A1 (en) * | 2001-10-26 | 2003-05-01 | Matsushita Electric Works, Ltd. | Device and method for vacuum deposition, and organic electroluminescent element provided by the device and the method |
| KR100958682B1 (ko) * | 2001-10-26 | 2010-05-20 | 파나소닉 전공 주식회사 | 진공증착장치, 진공증착방법 및 이들로부터 얻어지는 유기ｅｌ 소자 |
| JP2004047452A (ja) * | 2002-05-17 | 2004-02-12 | Semiconductor Energy Lab Co Ltd | 製造装置 |
| JP2013067867A (ja) * | 2012-12-13 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | 容器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57134555A (en) | 1982-08-19 |
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