JPS6143275U - 結晶成長装置 - Google Patents

結晶成長装置

Info

Publication number
JPS6143275U
JPS6143275U JP12545484U JP12545484U JPS6143275U JP S6143275 U JPS6143275 U JP S6143275U JP 12545484 U JP12545484 U JP 12545484U JP 12545484 U JP12545484 U JP 12545484U JP S6143275 U JPS6143275 U JP S6143275U
Authority
JP
Japan
Prior art keywords
crystal growth
growth equipment
crystal
raw material
seed crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12545484U
Other languages
English (en)
Other versions
JPH031485Y2 (ja
Inventor
和幸 古賀
俊武 中田
達彦 新名
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP12545484U priority Critical patent/JPS6143275U/ja
Publication of JPS6143275U publication Critical patent/JPS6143275U/ja
Application granted granted Critical
Publication of JPH031485Y2 publication Critical patent/JPH031485Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】 第１図、第２図は本考案の実施例を示す断面図、第３図
は従来例を示す断面図である。 １１，２１・・・・・・ルッポ、１２，２２・・・・・
・原材料、１４，２７・・・・・・種結晶、１５，２３
・・・・・・制御手段。

Claims (1)

    【実用新案登録請求の範囲】
  1. ルツボ中の原材料を昇華せしめて種結晶上に所望の結晶
    を成長せしめるための装置であって、上、 記昇華した
    原材料を上記種結晶表面のみに導くための制御手段を備
    えたことを特徴とする結晶成長装置。
JP12545484U 1984-08-17 1984-08-17 結晶成長装置 Granted JPS6143275U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12545484U JPS6143275U (ja) 1984-08-17 1984-08-17 結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12545484U JPS6143275U (ja) 1984-08-17 1984-08-17 結晶成長装置

Publications (2)

Publication Number Publication Date
JPS6143275U true JPS6143275U (ja) 1986-03-20
JPH031485Y2 JPH031485Y2 (ja) 1991-01-17

Family

ID=30684143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12545484U Granted JPS6143275U (ja) 1984-08-17 1984-08-17 結晶成長装置

Country Status (1)

Country Link
JP (1) JPS6143275U (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256792A (ja) * 1986-04-30 1987-11-09 Sharp Corp 化合物半導体単結晶の気相成長方法
JPS62283897A (ja) * 1986-05-30 1987-12-09 Sharp Corp 化合物半導体単結晶の気相成長方法
JP2010013296A (ja) * 2008-07-01 2010-01-21 Showa Denko Kk 炭化珪素単結晶成長用容器構造および炭化珪素単結晶の作製方法
JP2011132088A (ja) * 2009-12-25 2011-07-07 Denso Corp 炭化珪素単結晶の製造装置および製造方法
EP2365110A1 (en) * 2010-03-04 2011-09-14 Bridgestone Corporation Apparatus and method for producing silicon carbide single crystal
JP2011219336A (ja) * 2010-04-14 2011-11-04 Denso Corp 炭化珪素単結晶の製造方法および製造装置
JP2012067012A (ja) * 2012-01-12 2012-04-05 Denso Corp 炭化珪素単結晶の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134555A (en) * 1981-02-10 1982-08-19 Fuji Photo Film Co Ltd Method and device for forming thin film
JPS5935099A (ja) * 1982-08-17 1984-02-25 Agency Of Ind Science & Technol 炭化けい素結晶成長法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134555A (en) * 1981-02-10 1982-08-19 Fuji Photo Film Co Ltd Method and device for forming thin film
JPS5935099A (ja) * 1982-08-17 1984-02-25 Agency Of Ind Science & Technol 炭化けい素結晶成長法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256792A (ja) * 1986-04-30 1987-11-09 Sharp Corp 化合物半導体単結晶の気相成長方法
JPS62283897A (ja) * 1986-05-30 1987-12-09 Sharp Corp 化合物半導体単結晶の気相成長方法
JP2010013296A (ja) * 2008-07-01 2010-01-21 Showa Denko Kk 炭化珪素単結晶成長用容器構造および炭化珪素単結晶の作製方法
JP2011132088A (ja) * 2009-12-25 2011-07-07 Denso Corp 炭化珪素単結晶の製造装置および製造方法
CN102134743A (zh) * 2009-12-25 2011-07-27 株式会社电装 碳化硅单结晶的制造装置和制造方法
EP2365110A1 (en) * 2010-03-04 2011-09-14 Bridgestone Corporation Apparatus and method for producing silicon carbide single crystal
JP2011219336A (ja) * 2010-04-14 2011-11-04 Denso Corp 炭化珪素単結晶の製造方法および製造装置
JP2012067012A (ja) * 2012-01-12 2012-04-05 Denso Corp 炭化珪素単結晶の製造方法

Also Published As

Publication number Publication date
JPH031485Y2 (ja) 1991-01-17

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