JPH0157510B2 - - Google Patents

Info

Publication number
JPH0157510B2
JPH0157510B2 JP55006016A JP601680A JPH0157510B2 JP H0157510 B2 JPH0157510 B2 JP H0157510B2 JP 55006016 A JP55006016 A JP 55006016A JP 601680 A JP601680 A JP 601680A JP H0157510 B2 JPH0157510 B2 JP H0157510B2
Authority
JP
Japan
Prior art keywords
light emitting
layer
carrier confinement
inp
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55006016A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56103485A (en
Inventor
Shigenobu Yamagoshi
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP601680A priority Critical patent/JPS56103485A/ja
Publication of JPS56103485A publication Critical patent/JPS56103485A/ja
Publication of JPH0157510B2 publication Critical patent/JPH0157510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP601680A 1980-01-22 1980-01-22 Semiconductor light emission element Granted JPS56103485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP601680A JPS56103485A (en) 1980-01-22 1980-01-22 Semiconductor light emission element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP601680A JPS56103485A (en) 1980-01-22 1980-01-22 Semiconductor light emission element

Publications (2)

Publication Number Publication Date
JPS56103485A JPS56103485A (en) 1981-08-18
JPH0157510B2 true JPH0157510B2 (enExample) 1989-12-06

Family

ID=11626896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP601680A Granted JPS56103485A (en) 1980-01-22 1980-01-22 Semiconductor light emission element

Country Status (1)

Country Link
JP (1) JPS56103485A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63299186A (ja) * 1987-05-29 1988-12-06 Hitachi Ltd 発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Also Published As

Publication number Publication date
JPS56103485A (en) 1981-08-18

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