JPS56103485A - Semiconductor light emission element - Google Patents

Semiconductor light emission element

Info

Publication number
JPS56103485A
JPS56103485A JP601680A JP601680A JPS56103485A JP S56103485 A JPS56103485 A JP S56103485A JP 601680 A JP601680 A JP 601680A JP 601680 A JP601680 A JP 601680A JP S56103485 A JPS56103485 A JP S56103485A
Authority
JP
Japan
Prior art keywords
layer
light emission
type
grown
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP601680A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0157510B2 (enExample
Inventor
Shigenobu Yamagoshi
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP601680A priority Critical patent/JPS56103485A/ja
Publication of JPS56103485A publication Critical patent/JPS56103485A/ja
Publication of JPH0157510B2 publication Critical patent/JPH0157510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP601680A 1980-01-22 1980-01-22 Semiconductor light emission element Granted JPS56103485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP601680A JPS56103485A (en) 1980-01-22 1980-01-22 Semiconductor light emission element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP601680A JPS56103485A (en) 1980-01-22 1980-01-22 Semiconductor light emission element

Publications (2)

Publication Number Publication Date
JPS56103485A true JPS56103485A (en) 1981-08-18
JPH0157510B2 JPH0157510B2 (enExample) 1989-12-06

Family

ID=11626896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP601680A Granted JPS56103485A (en) 1980-01-22 1980-01-22 Semiconductor light emission element

Country Status (1)

Country Link
JP (1) JPS56103485A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4905060A (en) * 1987-05-29 1990-02-27 Hitachi, Ltd. Light emitting device with disordered region

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4905060A (en) * 1987-05-29 1990-02-27 Hitachi, Ltd. Light emitting device with disordered region

Also Published As

Publication number Publication date
JPH0157510B2 (enExample) 1989-12-06

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