JPH0157433B2 - - Google Patents
Info
- Publication number
- JPH0157433B2 JPH0157433B2 JP56003073A JP307381A JPH0157433B2 JP H0157433 B2 JPH0157433 B2 JP H0157433B2 JP 56003073 A JP56003073 A JP 56003073A JP 307381 A JP307381 A JP 307381A JP H0157433 B2 JPH0157433 B2 JP H0157433B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- memory cell
- misfetq
- voltage
- misfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 20
- 230000005669 field effect Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 45
- 229920005591 polysilicon Polymers 0.000 description 42
- 238000010586 diagram Methods 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 230000000295 complement effect Effects 0.000 description 7
- 230000003068 static effect Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56003073A JPS57117182A (en) | 1981-01-14 | 1981-01-14 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56003073A JPS57117182A (en) | 1981-01-14 | 1981-01-14 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57117182A JPS57117182A (en) | 1982-07-21 |
| JPH0157433B2 true JPH0157433B2 (enrdf_load_stackoverflow) | 1989-12-05 |
Family
ID=11547159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56003073A Granted JPS57117182A (en) | 1981-01-14 | 1981-01-14 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57117182A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5856288A (ja) * | 1981-09-28 | 1983-04-02 | Toshiba Corp | 半導体集積回路 |
| JPH01273291A (ja) * | 1988-04-25 | 1989-11-01 | Nec Corp | スタティックメモリ集積回路 |
-
1981
- 1981-01-14 JP JP56003073A patent/JPS57117182A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57117182A (en) | 1982-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4507759A (en) | Static memory | |
| US6787835B2 (en) | Semiconductor memories | |
| US4879690A (en) | Static random access memory with reduced soft error rate | |
| US4658159A (en) | Sense amplifier circuit for semiconductor memory device | |
| US3983412A (en) | Differential sense amplifier | |
| US4761765A (en) | Semiconductor memory device having improved data output circuit | |
| GB2162394A (en) | Mos static ram | |
| US7265412B2 (en) | Semiconductor memory device having memory cells requiring no refresh operation | |
| US5336914A (en) | Static semiconductor memory device | |
| US6043638A (en) | Reference voltage generating circuit capable of generating stable reference voltage independent of operating environment | |
| JPH08251012A (ja) | Ｃｍｏｓ論理回路 | |
| JP2736483B2 (ja) | 電圧発生装置 | |
| JPH08203270A (ja) | 半導体集積回路 | |
| JPH0774318A (ja) | 半導体集積回路 | |
| JPH0152906B2 (enrdf_load_stackoverflow) | ||
| US5267192A (en) | Semiconductor memory device | |
| JPH0157433B2 (enrdf_load_stackoverflow) | ||
| KR900001773B1 (ko) | 반도체 집적회로 | |
| JPS6155195B2 (enrdf_load_stackoverflow) | ||
| JPS6235559A (ja) | 半導体記憶装置 | |
| JPH10270988A (ja) | 基板バイアス効果を利用した遅延回路 | |
| JP2662800B2 (ja) | 半導体記憶装置 | |
| JPH02355A (ja) | 半導体記憶装置 | |
| JPH0687499B2 (ja) | 半導体記憶装置 | |
| EP0638905A2 (en) | Semiconductor memory integrated circuit |