JPS57117182A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57117182A
JPS57117182A JP56003073A JP307381A JPS57117182A JP S57117182 A JPS57117182 A JP S57117182A JP 56003073 A JP56003073 A JP 56003073A JP 307381 A JP307381 A JP 307381A JP S57117182 A JPS57117182 A JP S57117182A
Authority
JP
Japan
Prior art keywords
output
power supply
voltage
memory
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56003073A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0157433B2 (enrdf_load_stackoverflow
Inventor
Satoshi Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56003073A priority Critical patent/JPS57117182A/ja
Publication of JPS57117182A publication Critical patent/JPS57117182A/ja
Publication of JPH0157433B2 publication Critical patent/JPH0157433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP56003073A 1981-01-14 1981-01-14 Semiconductor integrated circuit Granted JPS57117182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56003073A JPS57117182A (en) 1981-01-14 1981-01-14 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56003073A JPS57117182A (en) 1981-01-14 1981-01-14 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57117182A true JPS57117182A (en) 1982-07-21
JPH0157433B2 JPH0157433B2 (enrdf_load_stackoverflow) 1989-12-05

Family

ID=11547159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56003073A Granted JPS57117182A (en) 1981-01-14 1981-01-14 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57117182A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856288A (ja) * 1981-09-28 1983-04-02 Toshiba Corp 半導体集積回路
JPH01273291A (ja) * 1988-04-25 1989-11-01 Nec Corp スタティックメモリ集積回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856288A (ja) * 1981-09-28 1983-04-02 Toshiba Corp 半導体集積回路
JPH01273291A (ja) * 1988-04-25 1989-11-01 Nec Corp スタティックメモリ集積回路

Also Published As

Publication number Publication date
JPH0157433B2 (enrdf_load_stackoverflow) 1989-12-05

Similar Documents

Publication Publication Date Title
KR0179679B1 (ko) 반도체장치
US6023422A (en) Method for changing the weight of a synaptic element
US4507759A (en) Static memory
US4297721A (en) Extremely low current load device for integrated circuit
JPH08204029A (ja) 半導体装置およびその製造方法
US4290185A (en) Method of making an extremely low current load device for integrated circuit
GB2162394A (en) Mos static ram
EP1529291A2 (en) Seu resistant sram using feedback mosfet
US4251876A (en) Extremely low current load device for integrated circuit
JPS57117182A (en) Semiconductor integrated circuit
US4504743A (en) Semiconductor resistor element
CA1046641A (en) Switched capacitor non-volatile mnos random access memory cell
US4320312A (en) Smaller memory cells and logic circuits
US4484088A (en) CMOS Four-transistor reset/set latch
JP2557553B2 (ja) スタティック型半導体メモリ
JPS5886763A (ja) 半導体インピ−ダンス構造とその製作方法
JPH10222984A (ja) Nチャンネル薄膜トランジスタ負荷装置を有するsram格納セルの構造及び製造方法
JP2658169B2 (ja) トライステートインバータ及びそれを用いたフリップフロップ
JPS6120149B2 (enrdf_load_stackoverflow)
JPS6439757A (en) Mos transistor resistor
JPH0240951A (ja) 半導体メモリ装置
JPS59229788A (ja) Mis型半導体記憶装置
KR960010071B1 (ko) 정적 메모리 셀
SU773727A1 (ru) Запоминающий элемент
KR100207464B1 (ko) 에스 램 셀의 제조방법